Corrigendum: Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks
Nanotechnology IOP Publishing 23:49 (2012) 499502
Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars
Journal of Applied Physics 112:11 (2012)
Abstract:
Focused ion beam milled micropillars employing upper and lower distributed Bragg reflectors (DBRs) and incorporating InGaN quantum dots were analysed both microstructurally and optically. Comparison of the surface characteristics and the optical resonance of pillars milled employing two recipes, using comparatively higher and lower beam currents, were carried out through electron back scatter diffraction, atomic force microscopy and low temperature micro-photoluminescence. Low temperature micro-photoluminescence highlighted singly resolved InGaN quantum dot emission as well as modes with typical quality factors (Q) of ∼200-450 for typical 1-4μm diameter pillars, while one exceptional 4μm diameter pillar displayed optically-pumped lasing with a Q of ∼1100 at a threshold of ∼620 kWcm-2. The higher current recipe resulted in pillars with thicker surface amorphous layers, while the lower current recipe resulted in pillars with thinner surface amorphous layers but rougher surfaces. Micropillars milled through the recipe utilising higher beam currents were tentatively shown to possess lower Qs on average, correlating with the thickness of the surface amorphous layer. Finite difference frequency domain simulations in combination with analytical approximations of the various optical loss pathways suggested that surface scattering related optical loss was not significant compared to internal-based and surface absorption-based losses. The magnitude of the internal loss was observed to fluctuate significantly, which was thought to relate to the fluctuating micro-structure within the lower DBR and within the InGaN quantum dot layer. © 2012 American Institute of Physics.Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.
Nanotechnology 23:40 (2012) 405602
Abstract:
Semiconductor nanopyramids (NPs) provide advantages in the development of novel functional optoelectronic devices due to their unique size-dependent properties. Here we demonstrate a new method for the fabrication of selectively self-assembled single-crystalline GaN NPs on the m-plane of periodically strained GaN/InGaN multiquantum disks embedded in the middle of GaN nanorods. The GaN NPs, which have ~100 nm diameters and heights, are observed by scanning electron microscopy and their crystalline structure is confirmed by high-resolution transmission electron microscopy. Experimental analysis directly reveals the strain distribution along the growth direction of the NPs. Cathodoluminescence measurements on a single NP show that its emission energy redshifts compared with that of bulk GaN, corroborating the results showing the formation of tensile strain in the NP. Observations of the uniform distribution and localization of these NPs show the possibility of further tuning their size and density by controlling periodically strained nanorod surfaces.Design and fabrication of optical filters with very large stopband (≈500 nm) and small passband (1 nm) in silicon-on-insulator
Photonics and Nanostructures - Fundamentals and Applications 10:4 (2012) 447-451
Abstract:
In this paper, we report on the design, fabrication and characterization of a broadband photonic crystal filter. Modeling with a genetic algorithm (GA) was used to investigate the effect of changing the number of periods and thickness ratios of a photonic crystal filter structure with two alternating materials. Theoretical optimized parameters were obtained as a function of wavelength for a photonic crystal filter with a very broad filter bandwidth as well as a very narrow transmission window. We used the determined optimum parameters at a wavelength of 1550 nm to fabricate the structure using e-beam lithography and inductively coupled plasma (ICP) etching. Experimental results show that the structure indeed has a very narrow transmission window and a low loss of just 4 dB. Hence, this structure can be regarded as a high precision filter for optical communication and photonic integrated chip technologies. © 2012 Elsevier B.V. All rights reserved.Effects of quantum coherence in metalloprotein electron transfer.
Physical review. E, Statistical, nonlinear, and soft matter physics 86:3 Pt 1 (2012) 031922