Quantum Optoelectronics

Research group

Research theme

Sub department

About

DYNAMIC CONTRIBUTIONS TO THE OPTICAL STARK-EFFECT IN SEMICONDUCTORS

PHYSICAL REVIEW B 48:7 (1993) 4695-4706

Authors:

JJ BAUMBERG, B HUTTNER, RA TAYLOR, JF RYAN
More details from the publisher
More details

Femtosecond Time-Resolved Optical Studies of Photoexcited States in C60

Chapter in Electronic Properties of Fullerenes, Springer Nature 117 (1993) 292-296

Authors:

TN Thomas, RA Taylor, JF Ryan, D Mihailovic, R Zamboni
More details from the publisher

TIME-RESOLVED OPTICAL STUDIES OF PHOTO-EXCITED STATES IN C-60

INT J MOD PHYS B 6:23-24 (1992) 3931-3934

Authors:

TN THOMAS, JF RYAN, RA TAYLOR, D MIHAILOVIC, R ZAMBONI
More details from the publisher

FEMTOSECOND HOLE BURNING MEASUREMENTS IN SEMICONDUCTORS

J LUMIN 53:1-6 (1992) 321-326

Authors:

RA TAYLOR, CWW BRADLEY, N MAYHEW, TN THOMAS, JF RYAN
More details from the publisher

Femtosecond hole burning measurements in semiconductors

Journal of Luminescence 53:1-6 (1992) 321-326

Authors:

RA Taylor, CWW Bradley, N Mayhew, TN Thomas, JF Ryan

Abstract:

Femtosecond transient transmission spectroscopy has been used to study the generation and thermalisation of hot photoexcited electrons and holes in semiconductors. Work on bulk AlxGa1-xAs has been extended to include a detailed numerical model of carrier thermalisation and cooling, which allows for dynamic screening of carrier-phonon interactions. This model shows excellent agreement with experimentally observed effects such as hole burning, single LO-phonon emission by electrons and two-temperature behaviour of electrons and holes at early times (<10 ps). Hole burning measurements have also been made on type-I GaAs/AlAs superlattices, where the density dependence of the transient transmission spectra has been investigated. © 1992.
More details from the publisher