Quantum Optoelectronics

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Time-resolved dynamics in single InGaN quantum dots (Invited Paper)

SPIE Proceedings SPIE 5725 (2005) 296-296

Authors:

Robert A Taylor, James W Robinson, James H Rice, Kwan H Lee, Anas Jarjour, Jong H Na, Shazia Yasin, Rachel A Oliver, Menno J Kappers, Colin J Humphreys, G Andrew D Briggs, David P Williams, Eoin P O'Reilly, Aleksey D Andreev, Yasuhiko Arakawa
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Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy

Applied Physics Letters 86:12 (2005) 1-3

Authors:

JH Na, RA Taylor, JH Rice, JW Robinson, KH Lee, YS Park, CM Park, TW Kang

Abstract:

We have investigated the behavior of excitons in GaN nanocolumns using time-integrated and time-resolved micro-photoluminescence measurements. In the weak confinement limit, the model of fractional-dimensional space gives an intermediate dimensionality of 2.14 for GaN nanocolumns, with an average diameter of 80 nm. Enhanced exciton and donor binding energies are deduced from a fractional-dimensional model and a phenomenological description. Time-integrated photoluminescence spectra as a function of temperature show a curved emission shift. Recombination dynamics are deduced from the temperature dependence of the PL efficiency and decay times. © 2005 American Institute of Physics.
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Temporal variation in photoluminescence from single InGaN quantum dots

Applied Physics Letters 84 (2005) 4110-4112

Authors:

RA Taylor, J. H. Rice, J.W. Robinson, A. Jarjour
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Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers

Applied Physics Letters 86:8 (2005) 1-3

Authors:

JH Na, RA Taylor, JH Rice, JW Robinson, KH Lee, YS Park, CM Park, TW Kang

Abstract:

We have investigated exciton dynamics in asymmetric GaN quantum discs embedded in AlGaN barriers with an Al content of 50% using time-integrated and time-resolved micro-photoluminescence measurements. Emission from the quantum discs emerges at lower energy than that from the GaN nanocolumns, which suggests that GaN quantum discs are strongly affected by the built-in electric field. The lifetimes of localized excitons in quantum discs were obtained. Nonlinear emission from quantum discs under high excitation power was attributed to tunneling of carriers to larger discs from smaller discs. © 2005 American Institute of Physics.
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Luminescence properties of isolated InGaN/GaN quantum dots

Physica Status Solidi (A) Applications and Materials Science 202:3 (2005) 372-376

Authors:

RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, JD Smith, C Liu, IM Watson

Abstract:

In x Ga 1-xN quantum dots have been fabricated by the selective growth of GaN micro-pyramid arrays topped with InGaN/GaN quantum wells. The spatially- and spectrally-resolved luminescence properties of these structures were measured using low-temperature micro-photoluminescence spectroscopy, The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit linewidths down to 650 μeV (limited by the spectrometer resolution). We describe the broadening of the luminescence peak from a single dot as a function of temperature and excitation power. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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