Quantum Optoelectronics

Abstract:

The effect of an externally applied lateral electric field upon an exciton confined in a single InGaN quantum dot is studied using microphotoluminescence spectroscopy. The quantum-confined Stark effect causes a shift in the exciton energy of more than 5 meV, accompanied by a reduction in the exciton oscillator strength. The shift has both linear and quadratic terms as a function of the applied field. © 2005 American Institute of Physics.

Abstract:

We have investigated the behavior of excitons in GaN nanocolumns using time-integrated and time-resolved micro-photoluminescence measurements. In the weak confinement limit, the model of fractional-dimensional space gives an intermediate dimensionality of 2.14 for GaN nanocolumns, with an average diameter of 80 nm. Enhanced exciton and donor binding energies are deduced from a fractional-dimensional model and a phenomenological description. Time-integrated photoluminescence spectra as a function of temperature show a curved emission shift. Recombination dynamics are deduced from the temperature dependence of the PL efficiency and decay times. © 2005 American Institute of Physics.

Abstract:

We have investigated exciton dynamics in asymmetric GaN quantum discs embedded in AlGaN barriers with an Al content of 50% using time-integrated and time-resolved micro-photoluminescence measurements. Emission from the quantum discs emerges at lower energy than that from the GaN nanocolumns, which suggests that GaN quantum discs are strongly affected by the built-in electric field. The lifetimes of localized excitons in quantum discs were obtained. Nonlinear emission from quantum discs under high excitation power was attributed to tunneling of carriers to larger discs from smaller discs. © 2005 American Institute of Physics.