Quantum Optoelectronics

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Resonant femtosecond emission from quantum well excitons: The role of rayleigh scattering and luminescence

Physical Review Letters 78:11 (1997) 2228-2231

Authors:

S Haacke, RA Taylor, R Zimmermann, I Bar-Joseph, B Deveaud

Abstract:

We study the ultrafast properties of secondary radiation of semiconductor quantum wells under resonant excitation. We show that the exciton density dependence allows one to identify the origin of secondary radiation. At high exciton densities, the emission is due to incoherent luminescence with a rise time determined by exciton-exciton scattering. For low densities, when the distance between excitons is much larger than their diameter, the temporal shape is independent of density and rises quadratically, in excellent agreement with recent theories for resonant Rayleigh scattering. © 1997 The American Physical Society.
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Direct observation in the temporal domain of relaxation oscillations in a semiconductor laser

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 204:1 (1997) 574-576

Authors:

T Hessler, S Haacke, JL Pleumeekers, PE Selbmann, MA Dupertuis, B Deveaud, P Doussiere, M Bachmann, JY Emery, T Ducellier, RA Taylor
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Efficient intersubband scattering via carrier-carrier interaction

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 204:1 (1997) 159-161

Authors:

M Hartig, S Haacke, PE Selbmann, B Deveaud, RA Taylor, L Rota
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Intersubband scattering rates in GaAs quantum wells under selective and resonant excitation, measured by femtosecond luminescence

SUPERLATTICES AND MICROSTRUCTURES 21:1 (1997) 77-83

Authors:

M Hartig, S Haacke, RA Taylor, L Rota, B Deveaud
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Relaxation Oscillations in the Gain Recovery of Gain-Clamped Semiconductor Optical Amplifiers: Simulation and Experiments

Optica Publishing Group (1997) sd14

Authors:

JL Pleumeekers, T Hessler, S Haacke, M-A Dupertuis, PE Selbmann, B Deveaud, RA Taylor, T Ducellier, P Doussière, M Bachmann, JY Emery
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