Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells
Physica B+C 134:1-3 (1985) 318-322
Abstract:
We report the first picosecond time-resolved photoluminescence measurementsof hot-carrier relaxation in a modulation-doped GaAs-GaAlAs MQW in the presence of strong magnetic fields. We have measured the lifetimes of carriers in excited Landau levels and have determined the time-dependent carrier temperature. We find that the cooling rate is slower in applied field tthan at B=0; also there is a significant increase in the cooling rate for B {greater-than or approximate} 10T. We report also the observation of highly time-dependent linewidths of the Landau levels. © 1985.Hot Electron Relaxation and Trapping in Modulation — Doped GaAs/GaAlAs Multiple Quantum Well Heterostructures
Springer Nature (1985) 567-570
PICOSECOND PHOTOLUMINESCENCE MEASUREMENTS OF LANDAU-LEVEL LIFETIMES AND TIME-DEPENDENT LANDAU-LEVEL LINBROADENING IN MODULATION-DOPED GAAS-GAALAS MULTIPLE QUANTUM WELLS
PHYSICA B & C 134:1-3 (1985) 318-322
PICOSECOND STUDIES OF LUMINESCENCE IN POLYTHIOPHENE AND POLYDIACETYLENE
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS 18:26 (1985) L843-L847
Stimulated Recombination and the Dynamic Mott Transition in GaTe
Springer Nature (1985) 1371-1374