Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
APPLIED PHYSICS LETTERS 79:21 (2001) 3434-3436
Quantum beats of free and bound excitons in GaN
APPLIED PHYSICS LETTERS 79:8 (2001) 1097-1099
Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
Physica B: Condensed Matter 272:1-4 (1999) 402-405
Abstract:
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced `cut-off' at ELO is observed for up to approximately 3 ps after photoexcitation. Monte Carlo simulations show that this behaviour is due to a remarkably strong electron-LO phonon interaction. Excitonic effects are also pronounced, and strongly influence the dynamics.Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects
PHYSICA B 272:1-4 (1999) 402-405
Abstract:
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced "cut-off" at E-LO is observed for up to similar to 3 ps after photoexcitation. Monte Carlo simulations show that this behaviour is due to a remarkably strong electron-LO phonon interaction. Excitonic effects are also pronounced and strongly influence the dynamics. (C) 1999 Published by Elsevier Science B.V. All rights reserved.Femtosecond Exciton Dynamics and the Mott Transition in GaN under Resonant Excitation
physica status solidi (b) Wiley 216:1 (1999) 57-62