Quantum Optoelectronics

Abstract:

Femtosecond optical absorption spectra of AlxGa1-xAs reveal rapid thermalisation of the electron-hole plasma to a two-temperature carrier distribution after ∼ 500fs. The carriers thermalise to a single-temperature distribution at ∼ 10ps. Single phonon emission by electrons is observed at early times when the carrier density is low. Theoretical calculations which model analytically the principal carrier-carrier and carrier-phonon interactions responsible for thermalisation give good agreement with the data. © 1989.

Abstract:

Photoluminescence intensity correlation measurements of GaAs quantum wells using 120 fs laser pulses show relatively slow relaxation times ≤ 10 ps at high energy close to the L valley conduction band minimum. This value is consistent with recent measurements of the L → Γ scattering time. However, theoretical estimates show that nonequilibrium phonon effects can also give rise to slow relaxation on this timescale.