Quantum Optoelectronics

Abstract:

We have measured the energy relaxation of hot carriers in doped and undoped GaAs/AlxGa1-xAs quantum wells by detecting time-resolved hot luminescence using a two-pulse intensity correlation technique. The results are compared with time-dependent intensity correlation functions calculated using a model of energy relaxation by optical phonon interactions which includes non-equilibrium phonon effects. The excellent agreement between calculated and experimental correlation functions shows the great potential of this method in measuring ultrafast relaxation processes. © 1994.

Abstract:

We report optical studies of MBE-grown ZnTe/GaSb. Main impurities and free exciton resonances are determined, and polariton-phonon scattering is observed. We also report time-resolved photoluminescence studies, yielding an estimate of the LO phonon lifetime in ZnTe. © 1994.

Abstract:

We report optical studies of MBE-grown ZnTe/GaSb. Main impurities and free exciton resonances are determined, and polariton-phonon scattering is observed. We also report time-resolved photoluminescence studies, yielding an estimate of the LO phonon lifetime in ZnTe. © 1994.

Abstract:

We report measurement of time resolved photoluminescence from ZnSe/ZnSSe superlattices. We observe an anomalous fast-decay component in the luminescence at an energy corresponding to that at which stimulated emission is observed at higher pump densities. From consideration of the risetimes and spectral position of the lasing line, we infer an excitonic scattering mechanism to be responsible for lasing in these samples. © 1994.