Quantum Optoelectronics

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THE FEMTOSECOND OPTICAL KERR EFFECT IN MOLTEN CESIUM-CHLORIDE

JOURNAL OF PHYSICS-CONDENSED MATTER 1:16 (1989) 2715-2719

Authors:

CWW BRADLEY, RA TAYLOR, JF RYAN, EWJ MITCHELL
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ENERGY RELAXATION IN p- AND n-GaAs QUANTUM WELLS: CONFINEMENT EFFECTS

Chapter in Hot Carriers in Semiconductors, Elsevier (1988) 459-462

Authors:

M Tatham, RA Taylor, JF Ryan, WI Wang, CT Foxon
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ENERGY RELAXATION IN PARA-GAAS AND NORMAL-GAAS QUANTUM WELLS - CONFINEMENT EFFECTS

SOLID-STATE ELECTRONICS 31:3-4 (1988) 459-462

Authors:

M TATHAM, RA TAYLOR, JF RYAN, WI WANG, CT FOXON
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Time-resolved exciton photoluminescence in gase and gate

Journal of Physics C: Solid State Physics 20:36 (1987) 6175-6187

Authors:

RA Taylor, JF Rayn

Abstract:

Time-resolved photoluminescence measurements of the layered semiconductors GaSe and GaTe have been made using a mode-locked dye laser a synchronously scanning streak camera. It is shown that at low excitation densities (1015-1017cm-3) exciton dynamics is dominated by trapping at defects. A rate equation model is developed that describes exciton formation, recombination and trapping. At 4K the authors determine free-exciton recombination times at 200 ps for GaTe and 350 ps for GaSe. Trapping times of 200 and 900 ps yield capture cross sections of 1.2*10-14cm2and 3.6*10-15cm2for GaTe and GaSe respectively. © 1987 IOP Publishing Ltd.
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TIME-RESOLVED EXCITON PHOTOLUMINESCENCE IN GASE AND GATE

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS 20:36 (1987) 6175-6187

Authors:

RA TAYLOR, JF RYAN
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