CORRELATED STATES OF DEGENERATE 2D ELECTRONS STUDIED BY OPTICAL SPECTROSCOPY
PHYS SCRIPTA T45 (1992) 164-167
Optical spectroscopy of GaAs in the extreme quantum limit: integer and fractional quantum Hall effect, and onset of the electron solid
Physica B: Physics of Condensed Matter 169:1-4 (1991) 336-354
Abstract:
Our recent optical detection of the integer and fractional quantum Hall effects in GaAs, by intrinsic band-gap photoluminescence at dilution refrigerator temperatures, is reviewed. This work has been extended to the extreme quantum limit where a photoluminescence peak develops close to Landau level filling factor v = 1 5 which correlates both with the onset of threshold behaviour in current-voltage characteristics of the two-dimensional electron system and a resonant radio-frequency absorption; the latter are quantitatively accounted for by a model of crystalline electronic structure broken up into domains. Preliminary mK transport experiments in intense, pulsed magnetic fields are also described, which establish a basis to access the electron solid phase transition in a hitherto unattainable region of the (B, T) plane. © 1991.OPTICAL MEASUREMENTS OF CORRELATED STATES OF 2-DIMENSIONAL ELECTRONS IN GAAS AT LOW-TEMPERATURES AND HIGH MAGNETIC-FIELDS
PHYS SCRIPTA T39 (1991) 223-229
OPTICAL SPECTROSCOPY OF GAAS IN THE EXTREME QUANTUM LIMIT - INTEGER AND FRACTIONAL QUANTUM HALL-EFFECT, AND ONSET OF THE ELECTRON SOLID
PHYSICA B 169:1-4 (1991) 336-354
OPTICAL STUDIES OF TUNNELING IN DOUBLE BARRIER DIODES
SUPERLATTICES AND MICROSTRUCTURES 9:3 (1991) 357-361