Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors
SUPERLATTICES AND MICROSTRUCTURES 26:5 (1999) 317-324
Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers
JOURNAL OF APPLIED PHYSICS 85:9 (1999) 6786-6789
Effect of ion mass on the irradiation-induced intermixing of GaAs/AlGaAs quantum wells
Proceedings of SPIE--the International Society for Optical Engineering SPIE, the international society for optics and photonics 3413 (1998) 140-145
Interdiffusion in GaAs-AlGaAs quantum wells using anodic and thermal oxides of GaAs
Institute of Electrical and Electronics Engineers (IEEE) 2 (1998) 36-37 vol.2
Improved carrier collection in intermixed InGaAs/GaAs quantum wells
APPLIED PHYSICS LETTERS 73:23 (1998) 3408-3410