Thin film quantum materials

Abstract:

AbstractThe van der Waals interaction enables atomically thin layers of exfoliated 2D materials to be interfaced in heterostructures with relaxed epitaxy conditions, however, the ability to exfoliate and freely stack layers without any strain or structural modification is by no means ubiquitous. In this work, the piezoelectricity of the exfoliated van der Waals piezoelectric α‐In2Se3 is utilized to modify the magnetic properties of exfoliated Fe3GeTe2, a van der Waals ferromagnet, resulting in increased domain wall density, reductions in the transition temperature ranging from 5 to 20 K, and an increase in the magnetic coercivity. Structural modifications at the atomic level are corroborated by a comparison to a graphite/α‐In2Se3 heterostructure, for which a decrease in the Tuinstra‐Koenig ratio is found. Magnetostrictive ferromagnetic domains are also observed, which may contribute to the enhanced magnetic coercivity. Density functional theory calculations and atomistic spin dynamic simulations show that the Fe3GeTe2 layer is compressively strained by 0.4%, reducing the exchange stiffness and magnetic anisotropy. The incorporation of α‐In2Se3 may be a general strategy to electrostatically strain interfaces within the paradigm of hexagonal boron nitride‐encapsulated heterostructures, for which the atomic flatness is both an intrinsic property and paramount requirement for 2D van der Waals heterojunctions.

Abstract:

In half-metallic systems, electronic conduction is mediated by a single spin species, offering enormous potential for spintronic devices. Here, using microscopic-area angle-resolved photoemission, we show that a spin-polarised two-dimensional hole gas is naturally realised in the polar magnetic semiconductor AgCrSe₂ by an intrinsic self-doping at its CrSe₂-terminated surface. Through comparison with first-principles calculations, we unveil a striking role of spin-orbit coupling for the surface hole gas, unlocked by both bulk and surface inversion symmetry breaking, suggesting routes for stabilising complex magnetic textures in the surface layer of AgCrSe₂.

Abstract:

Magnetic exchange springs (ESs) are composed of exchange-coupled hard and soft magnetic layers, i.e., layers with high and low anisotropy, respectively. The moments in the soft layer can be wound up by applying an external field, which has to be smaller than the anisotropy field of the hard layer. Alternatively, an ES can be realized by biasing the soft magnetic layer by two adjacent hard magnetic layers with different magnetic anisotropy directions. We have fabricated an ES layer stack by magnetron sputter deposition. As the hard magnetic bottom layer, we used epitaxial FePt L10, and as the top layer Co with both layers having different in-plane easy axes. These hard layers pin the moments of a soft permalloy (Ni81Fe19) layer sandwiched between them, winding up an ES at remanence. The anisotropy of the polycrystalline top Co layer was engineered by glancing-angle deposition to have in-plane easy axis anisotropy perpendicular to the easy direction of the bottom layer. Using soft x-ray spectroscopy and magneto-optical measurements, we found the in-plane ES to extend from the soft layer into the top layer of our FePt/permalloy/Co trilayer structure.

Abstract:

To harness the intriguing properties of 2D van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates are demonstrated. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness beyond three monolayer and homogeneous surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface plays an important role in tailoring the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. The results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs.