Thin film quantum materials

Abstract:

At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an s-wave SC in a TI can develop an order parameter with a p-wave component. Here we present experimental evidence for an unexpected proximity-induced novel superconducting state in a thin layer of the prototypical TI, Bi2Se3 proximity coupled to Nb. From depthresolved magnetic field measurements below the superconducting transition temperature of Nb, we observe a local enhancement of the magnetic field in Bi2Se3 that exceeds the externally applied field, thus supporting the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state. Our experimental results are complemented by theoretical calculations supporting the appearance of such a component at the interface which extends into the TI. This state is topologically distinct from the conventional Bardeen-Cooper-Schrieffer state it originates from. To the best of our knowledge, these findings present a first observation of bulk odd-frequency superconductivity in a TI. We thus reaffirm the potential of the TI-SC interface as a versatile platform to produce novel superconducting states.

Abstract:

Magnetic doping and proximity coupling can open a band gap in a topological insulator (TI) and give rise to dissipationless quantum conduction phenomena. Here, by combining these two approaches, we demonstrate a novel TI superlattice structure that is alternately doped with transition and rare earth elements. An unexpected exchange bias effect is unambiguously confirmed in the superlattice with a large exchange bias field using magneto-transport and magneto-optical techniques. Further, the Curie temperature of the Cr-doped layers in the superlattice is found to increase by 60 K compared to a Cr-doped single-layer film. This result is supported by density-functional-theory calculations, which indicate the presence of antiferromagnetic ordering in Dy:Bi2Te3 induced by proximity coupling to Cr:Sb2Te3 at the interface. This work provides a new pathway to realizing the quantum anomalous Hall effect at elevated temperatures and axion insulator state at zero magnetic field by interface engineering in TI heterostructures.

Abstract:

Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration, or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition-metal dichalcogenide van der Waals heterostructures with limited scalability. Here, we experimentally demonstrate the spin Hall effect up to room temperature in graphene combined with a nonmagnetic insulator, an evaporated bismuth oxide layer. The measured spin Hall effect arises most likely from an extrinsic mechanism. With a large spin-to-charge conversion efficiency, scalability, and ease of integration to electronic devices, we show a promising material heterostructure suitable for spin-based device applications.