Unveiling the ultrafast optoelectronic properties of 3D Dirac semi-metal Cd3As2
2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) (2020)
Direct observation of the energy gain underpinning ferromagnetic superexchange in the electronic structure of CrGeTe$_3$
(2019)
Tailoring the topological surface state in ultrathin α -Sn(111) films
Physical Review B: Condensed Matter and Materials Physics American Physical Society (2019)
Abstract:
We report on the electronic structure of α -Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energy angle-resolved photoemission spectroscopy allows for the direct observation of the linearly dispersing two-dimensional (2D) topological surface state (TSS) that exists between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200 meV below the Fermi level in 10-nm-thick films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The crossover to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin-zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of α -Sn films where the hybridization gap in the TSS coexists with the topologically nontrivial electronic structure and one can expect the presence of a one-dimensional helical edge state.Tailoring the topological surface state in ultrathin alpha -Sn(111) films
Physical Review B: Condensed Matter and Materials Physics American Physical Society 100 (2019) 245144
Abstract:
We report on the electronic structure of α-Sn films in the low thickness regime grown on InSb(111)A. High-resolution angle-resolved photoemission (ARPES), enhanced at low photon energies, allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV below the Fermi level in 10-nm-thick films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The cross-over to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of α-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure which must result in a presence of 1D helical edge states.Mode-resolved detection of magnetization dynamics using x-ray diffractive ferromagnetic resonance
Nano Letters American Chemical Society 20:1 (2019) 345-352