Transverse surface acoustic wave detection by scanning acoustic force microscopy
Applied Physics Letters 73:7 (1998) 882-884
Abstract:
We present a scanning acoustic force microscope (SAFM) for the study of surface acoustic wave (SAW) phenomena on the submicron lateral scale. Until now, SAWs with in-plane oscillation components could only be studied effectively via nonvanishing out-of-plane oscillation contributions. By operating the microscope in lateral force mode, where both bending and torsion of the cantilever are detected, additional amplitude-dependent signals are found, which are due to the interaction with purely in-plane polarized surface oscillations. To demonstrate the capabilities of this type of SAFM, Love waves were studied on the surface of layers deposited on ST-cut quartz with SAW propagation perpendicular to the crystal X-axis. The phase velocity of the wave as well as the amplitude of a standing wave field was measured and compared to calculated values. © 1998 American Institute of Physics.Intrinsic Stress and Misfit Relaxation Ge/Si(001)
Proceedings of the 1998 SSDM (1998)
Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
Surface Science 402-404 (1998) 290-294
Abstract:
It is well established that the growth of Ge on Si(001) proceeds by Stranski-Krastanov mode, i.e. 3D islands ("hut" and macroscopic clusters) nucleate on top of a 3-4 ML thick pseudomorphic layer. Here, we present in-situ intrinsic stress measurements of Ge/Si(001) up to the film thicknesses at which the 3D islands percolate. From the film stress - and supported by AFM investigations - three stages of film growth characterised by different reliefs of the misfit strain can be discriminated: (1) the pseudomorphic layer-by-layer stage, (2) nucleation and growth and (3) coalescence of 3D islands. © 1998 Elsevier Science B.V. All rights reserved.Stress and relief of misfit strain of Ge/Si(001)
Physical Review Letters 80:11 (1998) 2382-2385
Abstract:
The intrinsic stress of the Stranski-Krastanov system Ge/Si(001) was investigated in the range 700 1050 K. Characteristic stress features indicate that the relief of the misfit strain proceeds mainly in two steps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit dislocations in larger 3D islands and upon their percolation. The temperature dependence of strain relief by 3D islands as well as their nucleation and growth behavior support a kinetic pathway for 3D islanding. © 1998 The American Physical Society.Surfing the SAW: Visualizing the oscillation of Au(111) surface atoms
Proceedings of the IEEE Ultrasonics Symposium 1 (1997) 511-514