Photovoltaic & Optoelectronic Device Group

Abstract:

Constructing stable electrodes which function over long timescales at large current density is essential for the industrial realization and implementation of water electrolysis. However, rapid gas bubble detachment at large current density usually results in peeling-off of electrocatalysts and performance degradation, especially for long term operations. Here we construct a mechanically-stable, all-metal, and highly active CuMo₆S₈/Cu electrode by in-situ reaction between MoS₂ and Cu. The Chevrel phase electrode exhibits strong binding at the electrocatalyst-support interface with weak adhesion at electrocatalyst-bubble interface, in addition to fast hydrogen evolution and charge transfer kinetics. These features facilitate the achievement of large current density of 2500 mA cm^-2 at a small overpotential of 334 mV which operate stably at 2500 mA cm^-2 for over 100 h. In-situ total internal reflection imaging at micrometer level and mechanical tests disclose the relationships of two interfacial forces and performance of electrocatalysts. This dual interfacial engineering strategy can be extended to construct stable and high-performance electrodes for other gas-involving reactions.

Abstract:

Mixed-halide perovskites offer ideal bandgaps for tandem solar cells, but photoinduced halide segregation compromises photovoltaic device performance. This study explores the influence of a hole-transport layer, necessary for a full device, by monitoring halide segregation through in situ, concurrent X-ray diffraction and photoluminescence measurements to disentangle compositional and optoelectronic changes. This work demonstrates that top coating FA0.83Cs0.17Pb(Br0.4I0.6)3 perovskite films with a poly(triaryl)amine (PTAA) hole-extraction layer surprisingly leads to suppression of halide segregation because photogenerated charge carriers are rapidly trapped at interfacial defects that do not drive halide segregation. However, the generation of iodide-enriched regions near the perovskite/PTAA interface enhances hole back-transfer from the PTAA layer through improved energy level offsets, increasing radiative recombination losses. It is further found that while passivation with a piperidinium salt slows halide segregation in perovskite films, the addition of a PTAA top-coating accelerates such effects, elucidating the specific nature of trap types that are able to drive the halide segregation process. This work highlights the importance of selective passivation techniques for achieving efficient and stable wide-bandgap perovskite photovoltaic devices.

Abstract:

Colour-tuned phosphors are promising for advanced security applications such as multi-modal anti-counterfeiting and data encryption. The practical adoption of colour-tuned phosphors requires these materials to be responsive to multiple stimuli (e.g., excitation wavelength, excitation waveform, and temperature) and exhibit excellent materials stability simultaneously. Here we report germanium silicon oxide (GSO) - a heavy-metal-free inorganic phosphor - that exhibits colour-tuned ultra-long phosphorescence and delayed fluorescence across a broad temperature range (300 - 500 K) in air. We developed a sol-gel processing strategy to prepare amorphous oxides containing homogeneously dispersed Si and Ge atoms. The co-existence of Ge and Si luminescent centres (LC) leads to an excitation-dependent luminescence change across the UV-to-visible region. GSO exhibits Si LC-related ultra-long phosphorescence at room-temperature and thermally activated delayed fluorescence at temperatures as high as 573 K. This long-lived PL is sensitized via the energy transfer from Ge defects to Si LCs, which provides PL lifetime tunability for GSO phosphors. The oxide scaffold of GSO offers 500-day materials stability in air; and 1-week stability in strong acidic and basic solutions. Using GSO/polymer hybrids, we demonstrated colour-tuned security tags whose emission wavelength and lifetime can be controlled via the excitation wavelength, and temperature, indicating promise in security applications.This work was supported by the National Natural Science Foundation of China (21905316, 22175201) and the Science and Technology Planning Project of Guangdong Province (2019A050510018). Z.Y. would like to acknowledge financial support from Sun Yat-sen University. M.W., J.A., S.T., and E.H.S. acknowledge the financial support from the Natural Sciences and Engineering Research Council (NSERC) of Canada. We thank Prof. B. Huang (Sun Yat-sen University) and Prof. B. Xu (South China Normal University) for their assistance with temperature-dependent PL studies. L. Wei is thanked for the figure design. The synchrotron studies were financially supported by the Natural Sciences and Engineering Research Council (NSERC) of Canada. This research used resources of the SGM (11ID-1) beamline at the Canadian Light Source. The authors thank Dr. Tom Regier and Dr. Jay Dynes from SGM beamline for the assistance in conducting XAS measurements