Low Roll‐Off Perovskite Quantum Dot Light‐Emitting Diodes Achieved by Augmenting Hole Mobility

Advanced Functional Materials Wiley 30:19 (2020) 1910140

Authors:

Yu Wang, Yu Teng, Po Lu, Xinyu Shen, Pei Jia, Min Lu, Zhifeng Shi, Bin Dong, William W Yu, Yu Zhang

Abstract:

AbstractThe external quantum efficiencies (EQEs) of perovskite quantum dot light‐emitting diodes (QD‐LEDs) are close to the out‐coupling efficiency limitation. However, these high‐performance QD‐LEDs still suffer from a serious issue of efficiency roll‐off at high current density. More injected carriers produce photons less efficiently, strongly suggesting the variation of ratio between radiative and non‐radiative recombination. An approach is proposed to balance the carrier distribution and achieve high EQE at high current density. The average interdot distance between QDs is reduced and this facilitates carrier transport in QD films and thus electrons and holes have a balanced distribution in QD layers. Such encouraging results augment the proportion of radiative recombination, make devices with peak EQE of 12.7%, and present a great device performance at high current density with an EQE roll‐off of 11% at 500 mA cm−2 (the lowest roll‐off known so far) where the EQE is still over 11%.

Silver-Bismuth Bilayer Anode for Perovskite Nanocrystal Light-Emitting Devices.

The journal of physical chemistry letters 11:10 (2020) 3853-3859

Authors:

Xinyu Shen, Xiang Zhang, Chengyuan Tang, Xiangtong Zhang, Po Lu, Zhifeng Shi, Wenfa Xie, William W Yu, Yu Zhang

Abstract:

Perovskite nanocrystal light-emitting devices (PNC LEDs) exhibit great potential in display and lighting applications. Balanced hole and electron injection in the light-emitting layer is undoubtedly an effective way to improve LED performance. Here, bismuth (Bi) was introduced into PNC LEDs to form a silver-bismuth (Ag-Bi) bilayer anode. Ag diffused into a defective 2 nm thick Bi layer to form an alloy-like state that promoted hole injection, reduced the charge transfer resistance, and enhanced charge transfer, leading to more balanced hole-electron carriers in the emission layer through hole injection enhancement. As a result, the turn-on voltage and brightness changed from 2.41 V and 2200 cd m-2, respectively, for CsPb1-xZnxI3-based LEDs with a Ag monolayer anode to 2.2 V and 3714 cd m-2, respectively, for devices with a Ag-Bi bilayer anode. In addition, the performance of CsPbI3 and CsPbBrI2 PNC-based LEDs has also been effectively improved by using a Ag-Bi bilayer anode.

Thermal stability of CH3NH3PbIxCl3-x versus [HC(NH2)2]0.83Cs0.17PbI2.7Br0.3 perovskite films by X-ray photoelectron spectroscopy

Applied Surface Science Elsevier 513 (2020) 145596

Authors:

Małgorzata Kot, Mykhailo Vorokhta, Zhiping Wang, Henry J Snaith, Dieter Schmeißer, Jan Ingo Flege

Light soaking in metal halide perovskites studied via steady-state microwave conductivity

Communications Physics Springer Nature 3:1 (2020) 73

Authors:

C Lowell Watts, Lee Aspitarte, Yen-Hung Lin, Wen Li, Radwan Elzein, Rafik Addou, Min Ji Hong, Gregory S Herman, Henry J Snaith, John G Labram

Towards unification of perovskite stability and photovoltaic performance assessment

(2020)

Authors:

Bernard Wenger, Henry J Snaith, Isabel H Sörensen, Johannes Ripperger, Samrana Kazim, Shahzada Ahmad, Edgar R Nandayapa, Christine Boeffel, Silvia Colodrero, Miguel Anaya, Samuel D Stranks, Iván Mora-Seró, Terry Chien-Jen Yang, Matthias Bräuninger, Thorsten Rissom, Tom Aernouts, Maria Hadjipanayi, Vasiliki Paraskeva, George E Georghiou, Alison B Walker, Arnaud Walter, Sylvain Nicolay