Charge collection in irradiated HV-CMOS detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Elsevier 924 (2018) 214-218
Abstract:
Active silicon detectors built on p-type substrate are a promising technological solution for large area silicontrackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has tobe evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities inthe range of 20–1000Ωcmwere irradiated with neutrons and protons up to a fluence of2 × 1015neqcm−2and3.6 × 1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT andminimum ionising electrons from90Sr. Results were used to assess radiation hardness of the detector in the givenfluence range and to determine parameters of initial acceptor removal in different substrates.Search for Higgs boson pair production in the $γγWW^{*}$ channel using $pp$ collision data recorded at $\sqrt{s} = 13$ TeV with the ATLAS detector
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