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A VUV sub-micron hotspot for photoemission spectroscopy

Vacuum ultraviolet (VUV) lasers have exhibited great potential as the light source for various spectroscopies, which, if they can be focused into a smaller beam spot, will not only allow investigation of mesoscopic materials but also find applications in manufacture of nano-objects with excellent precision. Towards this goal, scientists in China invented a 177 nm VUV laser system that can achieve a record-small (<1 μm) focal spot at a long focal length (~45 mm). This system can be re-equipped for usage in low-cost ARPES and might benefit quantum materials, condensed matter physics and nanophotonics.

Prof Yulin Chen

Professor of Physics

Research theme

  • Quantum materials

Sub department

  • Condensed Matter Physics

Research groups

  • Electronic structures and photoemission spectroscopy
yulin.chen@physics.ox.ac.uk
Clarendon Laboratory, room RM263, Mullard Bldg.
Recent publications
  • About
  • Publications

Anomalous Fermi-Surface Dependent Pairing in a Self-Doped High-$T_c$ Superconductor

Phys. Rev. Lett. American Physical Society 97 (2006) 236401-236401

Authors:

Yulin Chen, Akira Iyo, Wanli Yang, Xingjiang Zhou, Donghui Lu, Hiroshi Eisaki, Thomas P Devereaux, Zahid Hussain, Z-X Shen
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Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence

Chn. J. Lumin. Chinese Academy of Science 2001:3 (2001) 218

Authors:

Liu C. H., Zhu J. J., Lin B. X., Chen Y. L., Peng C., Yang Z., Fu Z. X
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Electrical Properties of the ZnO/Si Heterostructure

Chinese Physics Letters 18:8 (2001) 1108

Abstract:

The electrical properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I - V , I - T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.
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The interface properties of MIS structures on anodically oxidized GaSb

Semiconductor Science and Technology IOP Publishing 12:9 (1997) 1140

Authors:

GLB Houston, Y Chen, J Singleton, NJ Mason, PJ Walker
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Improved photoluminescence from electrochemically passivated GaSb

Semiconductor Science and Technology IOP Publishing 12:4 (1997) 413

Authors:

A Salesse, R Alabedra, Y Chen, M Lakrimi, RJ Nicholas, NJ Mason, PJ Walker
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