Electrical Properties of the ZnO/Si Heterostructure
Chinese Physics Letters 18:8 (2001) 1108
Abstract:
The electrical properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I - V , I - T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.The interface properties of MIS structures on anodically oxidized GaSb
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