Pressure-Induced Superconductivity in the Thermoelectric Semiconductor Mg3Sb2
Abstract:
The intrinsic electronic structures of narrow bandgap thermoelectric (TE) materials serve as a platform for the investigation of coupling effects of quasi-particles under high pressure, enabling the exploration of emerging electronic and phonon transport, superconductivity, and topological transitions. Here, we report the discovery of pressure-induced superconductivity in the TE semiconductor Mg3Sb2. Upon increased pressure, metallization occurs at ∼8.7 GPa, followed by a superconducting transition concomitant with a carrier-type crossover from p- to n-type. This phenomenon arises from a pressure-induced structural phase transition from the semiconducting P3̅m1 to the metallic C2/m-I phase. The superconducting critical temperature (Tc) exhibits a dome-shaped pressure dependence, peaking at 3.3 K at 12.6 GPa. Combined theoretical calculations, high-pressure Raman spectroscopy, and X-ray diffraction (XRD) measurements reveal an additional structural transition above ∼20 GPa, yielding a distinct C2/m-II phase. Our findings establish the high-pressure phase diagram of Mg3Sb2, elucidate its pressure-dependent electronic properties, and provide valuable insights for future investigations of TE materials under high pressure.Interlayer-coupling-driven correlated and charge-ordered electronic states in a transition metal dichalcogenide superlattice
Abstract:
4Hb-TaS2, a van der Waals superlattice of alternating Ising-superconducting 1H-TaS2 and cluster-Mott-insulating 1T-TaS2 layers, exhibits emergent phenomena, including time-reversal symmetry-breaking superconductivity and spontaneous vortex phases, driven by interlayer interactions. Using area-selective angle-resolved photoemission spectroscopy, we directly probe the electronic structures of 1T- and 1H-terminated surfaces. Metallic states of subsurface 1H layers are folded to the Brillouin zone center by the 13 × 13 modulation of the surface 1T layer, forming chiral “windmill” Fermi surfaces via Umklapp scattering. These states hybridize with the incipient flat band of the surface 1T layer, producing a Kondo-like peak at the Fermi level. Interlayer charge transfer induces distinct 3×3 and 2×2 charge orders on surface and subsurface 1H layers, segmenting Fermi surfaces and shifting van Hove singularities. Our results reconcile competing Kondo and Mott models and highlight the interplay of flat bands, van Hove singularities, charge orders, and unconventional superconductivity in correlated superlattices.Orbital-hybridization-induced Ising-type superconductivity in a confined gallium layer
Abstract:
In low-dimensional superconductors, the interplay between quantum confinement and interfacial hybridization effects can reshape Cooper-pair wavefunctions and give rise to unconventional superconducting states. Here we use plasma-free confinement epitaxy assisted by a carbon buffer layer to synthesize a gallium trilayer sandwiched between graphene and a 6H-SiC(0001) substrate. Within this confined gallium layer, we demonstrate interfacial Ising-type superconductivity driven by atomic orbital hybridization. Electrical transport measurements reveal that the in-plane upper critical magnetic field reaches ~21.98 T at T = 400 mK, approximately 3.38 times the Pauli paramagnetic limit. Angle-resolved photoemission spectroscopy measurements, combined with theoretical calculations, confirm the presence of split Fermi surfaces with Ising-type spin textures at the K and K′ valleys of the confined gallium layer, originating from strong hybridization with the SiC substrate. This work establishes a strategy for realizing unconventional pairing wavefunctions through the synergistic combination of quantum confinement and interfacial hybridization effects.Interfacial coexistence of superconductivity and magnetism in NbN/Ti/MnBi2Te4 heterostructures
Abstract:
Magnetic/superconducting heterostructures represent a frontier in condensed matter physics, offering pathways to realize unconventional pairing mechanisms such as topological superconductivity, spin-triplet pairing, and Majorana zero modes for fault-tolerant quantum computing. In this work, we integrate the magnetic van der Waals material MnBi2Te4 (MBT) with a superconducting NbN thin film, achieving ultralow-disorder interfaces through Ti buffer layer engineering. Temperature- and field-dependent critical currents, extracted from differential resistance spectra, reveal robust coupling between the MnBi2Te4 and the superconducting order of NbN, enabling proximity-induced superconductivity within MnBi2Te4. Notably, the proximity-induced critical currents remain invariant under in-plane field rotation, in contrast to the anisotropic response observed in pristine NbN. Moreover, the hysteretic behavior observed in the interfacial magnetoresistance curves confirms the proximity-induced spin polarization at the MBT interface, which is consistent with Andreev reflection results. These findings demonstrate a platform for fabricating high-quality heterointerfaces and enable targeted exploration of exotic quantum states.