Unraveling loss mechanisms arising from energy-level misalignment between metal halide perovskites and hole transport layers
Abstract:
Metal halide perovskites are promising light absorbers for multijunction photovoltaic applications because of their remarkable bandgap tunability, achieved through compositional mixing on the halide site. However, poor energy-level alignment at the interface between wide-bandgap mixed-halide perovskites and charge-extraction layers still causes significant losses in solar-cell performance. Here, the origin of such losses is investigated, focusing on the energy-level misalignment between the valence band maximum and the highest occupied molecular orbital (HOMO) for a commonly employed combination, FA0.83Cs0.17Pb(I1-xBrx)3 with bromide content x ranging from 0 to 1, and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). A combination of time-resolved photoluminescence spectroscopy and numerical modeling of charge-carrier dynamics reveals that open-circuit voltage (VOC) losses associated with a rising energy-level misalignment derive from increasing accumulation of holes in the HOMO of PTAA, which then subsequently recombine non-radiatively across the interface via interfacial defects. Simulations assuming an ideal choice of hole-transport material to pair with FA0.83Cs0.17Pb(I1-xBrx)3 show that such VOC losses originating from energy-level misalignment can be reduced by up to 70 mV. These findings highlight the urgent need for tailored charge-extraction materials exhibiting improved energy-level alignment with wide-bandgap mixed-halide perovskites to enable solar cells with improved power conversion efficiencies.
The Role of the Organic Cation in Developing Efficient Green Perovskite LEDs Based on Quasi‐2D Perovskite Heterostructures
Charting the irreversible degradation modes of low bandgap Pb-Sn perovskite compositions for de-risking practical industrial development
Abstract:
The commercialization of a solar technology necessitates the fulfillment of specific requirements both regarding efficiency and stability to enter and gain space in the photovoltaic market. These aims are heavily dependent on the selection of suitable materials, which is critical for suppressing any reliability risks arising from inherent instabilities. Focusing on the absorber material, herein the most suitable low bandgap lead-tin composition candidate for all-perovskite tandem applications is investigated by studying their degradation mechanisms with both widely available and advanced characterization techniques. Three irreversible degradation processes are identified in narrow bandgap Pb-Sn perovskite absorbers: 1) Tin (Sn) oxidation upon air exposure, 2) methylammonium (MA) loss upon heat exposure, and 3) formamidinium (FA) and cesium (Cs) segregation leading to impurity phase formation. From an industrial perspective, it is proposed to refocus attention on FASn0.5Pb0.5I3 which minimizes all three effects while maintaining a suitable bandgap for a bottom cell and good performance. Moreover, a practical and highly sensitive characterization method is proposed to monitor the oxidation, which can be deployed both in laboratory and industrial environments and provide useful information for the technological development process, including, the effectiveness of encapsulation methods, and the acceptable time windows for air exposure.