Proposal for a micromagnetic standard problem for materials with Dzyaloshinskii-Moriya interaction
New Journal of Physics Institute of Physics 20 (2018) 113015
Abstract:
Understanding the role of the Dzyaloshinskii-Moriya interaction (DMI) for the formation of helimagnetic order, as well as the emergence of skyrmions in magnetic systems that lack inversion symmetry, has found increasing interest due to the significant potential for novel spin based technologies. Candidate materials to host skyrmions include those belonging to the B20 group such as FeGe, known for stabilising Bloch-like skyrmions, interfacial systems such as cobalt multilayers or Pd/Fe bilayers on top of Ir(111), known for stabilising N´eel-like skyrmions, and, recently, alloys with a crystallographic symmetry where anti-skyrmions are stabilised. Micromagnetic simulations have become a standard approach to aid the design and optimisation of spintronic and magnetic nanodevices and are also applied to the modelling of device applications which make use of skyrmions. Several public domain micromagnetic simulation packages such as OOMMF, MuMax3 and Fidimag already offer implementations of different DMI terms. It is therefore highly desirable to propose a so-called micromagnetic standard problem that would allow one to benchmark and test the different software packages in a similar way as is done for ferromagnetic materials without DMI. Here, we provide a sequence of well-defined and increasingly complex computational problems for magnetic materials with DMI. Our test problems include 1D, 2D and 3D domains, spin wave dynamics in the presence of DMI, and validation of the analytical and numerical solutions including uniform magnetisation, edge tilting, spin waves and skyrmion formation. This set of problems can be used by developers and users of new micromagnetic simulation codes for testing and validation and hence establishing scientific credibility.Microscopic effects of Dy-doping in the topological insulator Bi2Te3
(2018)
Magnetic X-ray spectroscopy of two-dimensional CrI3 layers
Materials Letters Elsevier 232 (2018) 5-7
Abstract:
The recently confirmed monolayer ferromagnet CrI3 is a frisky example of a two-dimensional ferromagnetic material with great application potential in van der Waals heterostructures. Here we present a soft X-ray absorption spectroscopy study of the magnetic bulk properties of CrI3, giving insight into the magnetic coupling scenario which is relevant for understanding its thickness-dependent magnetic properties. The experimental Cr X-ray magnetic circular dichroism spectra show a good agreement with calculated spectra for a hybridized ground state. In this high-spin Cr ground state the Cr–I bonds show a strongly covalent character. This is responsible for the strong superexchange interaction and increased spin-orbit coupling, resulting in the large magnetic anisotropy of the two-dimensionally layered CrI3 crystal.THz carrier dynamics and magnetotransport study of topological surface states in thin film Bi2 Se3
Proceedings of SPIE - The International Society for Optical Engineering 10531 (2018)
Abstract:
© 2018 SPIE. The surface of a topological insulator harbors exotic topological states, protected against backscattering from disorder by time reversal symmetry. The study of these exotic quantum states not only provides an opportunity to explore fundamental phenomena in condensed matter physics, such as the spin Hall effect, but also lays the foundation for applications from quantum computing to spintronics. Conventional electrical measurements suffer from substantial bulk interference, making it difficult to clearly distinguish topological surface states from bulk states. Employing terahertz time-domain spectroscopy, we study the temperature-dependent optical behavior of a 23-quintuple-thick film of bismuth selenide (Bi2Se3) allowing for the deconvolution of the surface state response from the bulk. Our measurement of carrier dynamics give an optical mobility exceeding 2100 cm2/V•s at 4 K, indicative of a surface-dominated response, and a scattering lifetime of ∼0.18 ps and a carrier density of 6×1012cm-2at 4 K for the Bi2Se3film. The sample was further processed into a Hall bar device using two different etching techniques, a wet chemical etching and Ar+ion milling, which resulting in a reduced Hall mobility. Even so, the magneto-conductance transport reveals weak antilocalization behavior in our Bi2Se3 sample, consistent with the presence of a single topological surface state mode.Electronic structure and enhanced charge-density wave order of monolayer VSe2
Nano Letters American Chemical Society 18:7 (2018) 4493-4499