Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation
IEEE Journal on Selected Topics in Quantum Electronics 17:1 (2011) 17-21
Abstract:
We have improved the stability and performance of terahertz (THz) photoconductive (Auston) switches using a combination of (NH4) 2S surface passivation (SP) and silicon nitride (Si3 N4) encapsulation. The influences of SP and encapsulation on the ultrafast electron dynamics in GaAs were examined using THz emission spectroscopy and optical pumpTHz probe spectroscopy. The power of THz radiation from the surface of photoexcited GaAs increased by a factor of 5 after passivation and encapsulation, while the process lengthened the trapping time for photoexcited charge carriers. By fabricating and assessing the performance of photoconductive switches, we found that passivation and encapsulation increased the average THz power generated fourfold. © 2010 IEEE.III-V semiconductor nanowires for optoelectronic device applications
PROGRESS IN QUANTUM ELECTRONICS 35:2-3 (2011) 23-75
Ultrafast Charge Separation at a Single-walled Carbon Nanotube – Polymer Interface
MRS Advances Springer Nature 1286:1 (2011) 207
Characterisation of nanostructures via terahertz spectroscopy
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (2010) 23-24
Abstract:
We have used terahertz spectroscopy to measure the conductivity and time-resolved photoconductivity of a range of semiconducting nanostructures. This article focuses on our recent terahertz conductivity studies on semiconductor nanowires and single walled carbon nanotubes. © 2010 IEEE.Intense terahertz generation based on the photo-dember effect
Optics InfoBase Conference Papers (2010)