Thermally stimulated luminescence in ion-implanted GaAs
JOURNAL OF LUMINESCENCE 96:2-4 (2002) PII S0022-2313(01)00219-8
Effects of magnetic field and optical fluence on terahertz emission in gallium arsenide
Physical Review B - Condensed Matter and Materials Physics 64:20 (2001) 2052041-2052045
Abstract:
The excitation density dependence of magnetic-field-enhanced terahertz (THz = 1012 Hz) emission from (100) GaAs is studied. It is found that THz power saturates at a higher optical-excitation density, when a magnetic field is applied. This observation explains the different magnetic field enhancements that have been reported recently. At low excitation densities the results are shown to be consistent with a simple model of carrier-carrier scattering, whilst at higher densities surface field screening becomes important.Effects of magnetic field and optical fluence on terahertz emission in gallium arsenide
Physical Review B - Condensed Matter and Materials Physics 64:20 (2001) 2052041-2052045
Abstract:
The excitation density dependence of magnetic-field-enhanced terahertz (THz = 1012 Hz) emission from (100) GaAs is studied. It is found that THz power saturates at a higher optical-excitation density, when a magnetic field is applied. This observation explains the different magnetic field enhancements that have been reported recently. At low excitation densities the results are shown to be consistent with a simple model of carrier-carrier scattering, whilst at higher densities surface field screening becomes important.Simulation of surface field THz generation in a magnetic field
Conference on Lasers and Electro-Optics Europe - Technical Digest (2001) 104
Magnetic field enhanced terahertz emission from semiconductor surfaces
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II 87 (2001) 178-179