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Perovskite crystallisation graphic

Nakita K Noel

Associate Professor and EPSRC Research Fellow

Research theme

  • Photovoltaics and nanoscience

Sub department

  • Condensed Matter Physics

Research groups

  • Novel Energy Materials and Advanced Characterisation
  • Advanced Device Concepts for Next-Generation Photovoltaics
nakita.noel@physics.ox.ac.uk
Telephone: 01865 (2)72401
Robert Hooke Building, room G20
  • About
  • Publications

My research lies at the intersection of solid-state physics, chemistry, and materials science, with the aim of uncovering the fundamental processes that govern thin-film crystallisation and defect formation in semiconductor materials. Currently, I focus on elucidating the intricate relationships between precursor chemistry, crystallisation kinetics, and defect formation in metal halide perovskites fabricated using both solution-based and vapour-phase deposition approaches. By combining advanced nanoscale characterisation techniques with measurements of bulk thin-film properties, my work seeks to disentangle how atomic level interactions and phase evolution pathways influence thin-film morphology, defect landscapes, and the optoelectronic properties of thin-films and devices.

These insights are intended to bridge the gap between fundamental chemical mechanisms and practical materials and device physics; enabling the rational design of new precursor systems, solvent environments, and deposition modalities tailored towards high-performance semiconductor thin films. Ultimately, the overarching goal of my research is to translate this fundamental understanding into tangible performance improvements in perovskite-based optoelectronic devices, particularly high-efficiency solar cells and light-emitting diodes (LEDs), while providing guiding principles for the development of the next generation of semiconductors.

Research interests

Emerging Semiconductor Materials
Optoelectronic Devices
Crystallisation Kinetics
Defect Passivation
Halide Perovskites
Materials Synthesis and Processing

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