Correlation between temperature activation of charge-carrier generation efficiency and hole mobility in small-molecule donor materials.
Chemphyschem : a European journal of chemical physics and physical chemistry 15:6 (2014) 1049-1055
Abstract:
In organic solar cells, free charge carriers are generated at the interface between an electron-donating and an electron-accepting material. The detailed mechanisms of the generation of free charge carriers are still under discussion. In this work, we investigate the influence of temperature on the generation efficiency of free charge carriers in blends of dicyanovinyl substituted oligothiophene (DCVnT) molecules and C60 by quasi-steady-state photoinduced absorption (PIA) measurements. The observed positive temperature dependence of charge-carrier generation can be directly correlated to the charge-transport behavior. The determined activation energy scales inversely with the hole mobility for all investigated DCVnT derivatives, suggesting higher dissociation probability of bound interfacial charge pairs at high mobility. Furthermore, the energetic disorder parameter, σ, determined by CELIV (charge extraction by linearly increasing voltage) measurements for a DCV6T derivative, matches the activation energy from the PIA measurements. In conclusion, these results underline the need for high-mobility donor materials for optimal charge-pair dissociation in organic solar cells.Improved organic p-i-n type solar cells with n-doped fluorinated hexaazatrinaphthylene derivatives HATNA-F6 and HATNA-F12 as transparent electron transport material
Journal of Applied Physics AIP Publishing 115:5 (2014) 054515
Molecular doping for control of gate bias stress in organic thin film transistors
Applied Physics Letters 104:1 (2014)
Abstract:
The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface. © 2014 AIP Publishing LLC.Electroabsorption studies of organic p-i-n solar cells: Evaluating the built-in voltage
MRS Proceedings 1639:1 (2014)
Abstract:
Copyright © Materials Research Society 2014. We investigate the built-in voltage in organic bulk heterojunction solar cells using electroabsorption spectroscopy based on the Stark effect, i.e. the variation of the absorption energies of a material caused by an electric field. Due to spectral contributions of permanent dipoles, a novel approach for evaluating the EA spectra is required. We use a fitting routine analyzing a broad spectral range instead of using only a single wavelength. A reliable quantitative determination of the built-in voltage is achieved.Electroabsorption studies of organic p-i-n solar cells: Increase of the built-in voltage by higher doping concentration in the hole transport layer
Organic Electronics 15:2 (2014) 563-568