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One of the substrate layouts for our organic solar cells
Credit: AFMD Group

Moritz Riede

Professor of Soft Functional Nanomaterials

Research theme

  • Photovoltaics and nanoscience

Sub department

  • Condensed Matter Physics

Research groups

  • Advanced Functional Materials and Devices (AFMD) Group
moritz.riede@physics.ox.ac.uk
Telephone: 01865 (2)72377 (office),01865 (2)82095 (lab)
  • About
  • Research
  • Teaching
  • Publications

Increased Open‐Circuit Voltage of Organic Solar Cells by Reduced Donor‐Acceptor Interface Area

Advanced Materials Wiley 26:23 (2014) 3839-3843

Authors:

Koen Vandewal, Johannes Widmer, Thomas Heumueller, Christoph J Brabec, Michael D McGehee, Karl Leo, Moritz Riede, Alberto Salleo
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Correlation between Temperature Activation of Charge‐Carrier Generation Efficiency and Hole Mobility in Small‐Molecule Donor Materials

ChemPhysChem Wiley 15:6 (2014) 1049-1055

Authors:

Christian Koerner, Moritz Philipp Hein, Vaidotas Kažukauskas, Andrius Sakavičius, Vytautas Janonis, Roland Fitzner, Peter Bäuerle, Karl Leo, Moritz Riede
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Built-in voltage of organic bulk heterojuction p-i-n solar cells measured by electroabsorption spectroscopy

AIP Advances AIP Publishing 4:4 (2014) 047134

Authors:

E Siebert-Henze, VG Lyssenko, J Fischer, M Tietze, R Brueckner, M Schwarze, K Vandewal, D Ray, M Riede, K Leo
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Improved organic p-i-n type solar cells with n-doped fluorinated hexaazatrinaphthylene derivatives HATNA-F6 and HATNA-F12 as transparent electron transport material

Journal of Applied Physics AIP Publishing 115:5 (2014) 054515

Authors:

Franz Selzer, Christiane Falkenberg, Manuel Hamburger, Martin Baumgarten, Klaus Müllen, Karl Leo, Moritz Riede
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Molecular doping for control of gate bias stress in organic thin film transistors

Applied Physics Letters 104:1 (2014)

Authors:

MP Hein, AA Zakhidov, B Lüssem, J Jankowski, ML Tietze, MK Riede, K Leo

Abstract:

The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface. © 2014 AIP Publishing LLC.
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