Moritz Riede

Abstract:

We report process improvements for the fabrication of single-walled carbon nanotube ethylene-vinyl acetate transparent conductive films. CNT:EVA films demonstrate high resilience against folding and can replace the external dopant in a spiro-OMeTAD based hole selective contact of n-i-p perovskite solar cells achieving a steady-state efficiency of 16.3%. The adapted process is fully scalable, and compared to previous reports (Mazzotta et al., 2018) lowers the material cost dramatically and improves DC to optical conductivity ratio by two orders of magnitude to σdc/σop = 3.6 for pristine and σdc/σop = 15 for chemically doped films. We analyse the microstructure of our films via small angle neutron scattering and find a positive correlation between the long range packing density of the CNT:EVA films and the σdc/σop performance. Increasing monomer ratio and chain length of the EVA polymer improves resilience against bending strain, whereas no significant effect on the CNT wrapping and electrical conductivity of resulting films is found.

Abstract:

We report on the characterization of the growth of vacuum-deposited zinc phthalocyanine (ZnPc) thin films on glass through a combination of in situ grazing incidence x-ray scattering, x-ray reflectivity, and atomic force microscopy. We found that the growth at room temperature proceeds via the formation of two structurally unique substrate-induced interfacial layers, followed by the growth of the γ -ZnPc polymorph thereafter (thickness ≈ 1.0 nm). As the growth of the bulk γ -ZnPc progresses, a substantial out-of-plane lattice strain ( ≈ 15 % relative to γ -ZnPc powder) is continually relaxed during the thin film growth. The rate of strain relaxation was slowed after a thickness of ≈ 13 nm, corresponding to the transition from layer growth to island growth. The findings reveal the real-time microstructural evolution of ZnPc and highlight the importance of substrate-induced strain on thin film growth.

Abstract:

<jats:title>Abstract</jats:title> <jats:p>A correct determination of voltage losses is crucial for the development of organic solar cells (OSCs) with improved performance. This requires an in-depth understanding of the properties of interfacial charge transfer (CT) states, which not only set the upper limit for the open-circuit voltage of a system, but also govern radiative and non-radiative recombination processes. Over the last decade, different approaches have emerged to classify voltage losses in OSCs that rely on a generic detailed balance approach or additionally include CT state parameters that are specific to OSCs. In the latter case, a correct determination of CT state properties is paramount. In this work, we summarize the different frameworks used today to calculate voltage losses and provide an in-depth discussion of the currently most important models used to characterize CT state properties from absorption and emission data of organic thin films and solar cells. We also address practical concerns during the data recording, analysis, and fitting process. Departing from the classical two-state Marcus theory approach, we discuss the importance of quantized molecular vibrations and energetic hybridization effects in organic donor-acceptor systems with the goal to providing the reader with a detailed understanding of when each model is most appropriate.</jats:p>

Abstract:

Copper(I) thiocyanate (CuSCN) is an effective interlayer material for hole injection and transport in organic electronic devices but its solution processing has conventionally utilized undesirable di-n-alkyl sulfide solvents such as diethyl- (DES) and dipropyl-sulfide (DPS). Herein, this paper reports on the use of N,N-dimethylformamide (DMF) and 1-methyl-2-pyrrolidinone (NMP) as alternative solvents for CuSCN interlayers and performs a detailed comparison of the resulting properties relative to films processed from DES and DPS and two other recent alternatives, dimethyl sulfoxide (DMSO) and ammonium hydroxide. The surface roughness, polymorphism, and surface chemistry of the resulting CuSCN layers are reported. The interlayer surface energy and ionization potential that are key to the overlying semiconductor microstructure and interfacial energy barrier, and hence to charge transport and injection, are also discussed. Finally, systematic device tests using well-known organic semiconductors in light-emitting diode, solar cell and field-effect transistor structures demonstrate the overall suitability of DMSO and DMF as solvents for CuSCN interlayer deposition to achieve better device performance. This study broadens the applicability of CuSCN as a highly efficient hole injection/transport material for organic semiconductor devices by expanding the documented range of suitable CuSCN solvents.