Optical studies on InxGa1-xN quantum disks
Proceedings of SPIE--the International Society for Optical Engineering SPIE, the international society for optics and photonics 7937 (2011) 793713-793713-8
Ano expresspen accessgan nanorods grown on si (111) infstrates and exciton localization
Nanoscale Research Letters 6:1 (2011)
Abstract:
We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I1). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the I1 and I2 transitions were measured to be < 100 ps due to enhanced surface recombination. PACS: 78.47.+p, 78.55.-m, 78.55.Cr, 78.66.-w, 78.66.Fd. © 2011 Park et al.Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns
JOURNAL OF APPLIED PHYSICS 109:6 (2011) ARTN 063515
Growth and optical characterisation of multilayers of InGaN quantum dots
Journal of Crystal Growth (2011)
InGaN super-lattice growth for fabrication of quantum dot containing microdisks
JOURNAL OF CRYSTAL GROWTH 321:1 (2011) 113-119