Professor Robert Taylor

Abstract:

Electroluminescence from single nitride-based quantum dots is reported. Clear single quantum dot emission is observed, which persists up to ∼85 K. This is achieved through the study of a quantum dot layer in the intrinsic region of a forward-biased vertical p-i-n diode. The current-voltage characteristic of the devices is examined at 4.3 K and observed to exhibit electrical bistability phenomena, which is explained in terms of charge accumulation in the InGaN layer. The dependence of the emission properties on current injection conditions are presented and related to the electrical properties of the device. © 2008 American Institute of Physics.

Abstract:

A method for preparing ultrathin single-crystal diamond membranes suitable for post-processing and liftout, is reported. The proposed method used single-crystal diamond substrates and two-energy ion implant process for the fabrication of thin diamond membranes. Two ion-implant process was used in this method to prepare two different damage layers within diamond sample. This method can be used for preparing integrated quantum-photonic structure based on color center in diamond. This method can also be used for fabricating various structures including Bragg gratings and whispering gallery mode resonators. A significant application of the diamond nanostructures is to fabricate the micro- and nanoscale cantilevers. It was also observed that the fabricated single-crystal diamond are suitable for another FIB processing.