Two-photon absorption from single InGaN/GaN quantum dots
Physica E: Low-Dimensional Systems and Nanostructures 32:1-2 SPEC. ISS. (2006) 119-122
Abstract:
We present a study of the time-integrated and time-resolved photoluminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppression of the emission from the underlying quantum well to which the QDs are coupled and yet relatively strong QD emission is observed. This effect is explained in terms of the enhancement of two-photon absorption in QDs due to the full confinement of carriers. Furthermore, evidence of the presence of excited states is revealed from the two-photon photoluminescence excitation spectra presented in the study. © 2006 Elsevier B.V. All rights reserved.Cryogenic Two-Photon Laser Photolithography with SU-8
Applied Physics Letters 88 (2006) 143123 3pp
Two-photon absorption from single InGaN/GaN quantum dots
PHYSICA E 32:1-2 (2006) 119-122
Abstract:
We present a study of the time-integrated and time-resolved photo luminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppression of the emission from the underlying quantum well to which the QDs are coupled and yet relatively strong QD emission is observed. This effect is explained in terms of the enhancement of two-photon absorption in QDs due to the full confinement of carriers. Furthermore, evidence of the presence of excited states is revealed from the two-photon photoluminescence excitation spectra presented in the study. (c) 2006 Elsevier B.V. All rights reserved.Direct optical excitation of a fullerene-incarcerated metal ion
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Nanotechnology 17:3 (2006) 913-916