Accuracy of single quantum dot registration using cryogenic laser photolithography
Institute of Electrical and Electronics Engineers (IEEE) 2 (2006) 723-726
Crystal-encapsulation-induced band-structure change in single-walled carbon nanotubes: Photoluminescence and Raman spectra
PHYSICAL REVIEW B 74:24 (2006) ARTN 245418
Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
APPLIED PHYSICS LETTERS 89:25 (2006) ARTN 253120
Direct optical excitation of a fullerene-incarcerated metal ion
CHEMICAL PHYSICS LETTERS 428:4-6 (2006) 303-306
Dynamics of localized carriers in InGaN multi-quantum wells
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49:2 (2006) 538-541