Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
Applied Physics Letters 89:25 (2006)
Abstract:
Carrier localization in InGaNGaN multiple-quantum wells (MQWs) with three different well thicknesses was investigated optically using time-integrated and time-resolved microphotoluminescence spectroscopy. An anomalous temperature dependence of the photoluminescence peak energy was observed, as a consequence of local potential fluctuations. The carrier localization was more prominent in the case of MQWs with wide well thickness. The results indicate that the degree of potential fluctuation increases with increasing well thickness. Emission from quantum-dot-like states only became apparent in MQWs with wide well thickness, which supports the assertion that carrier localization in InGaNGaN MQWs is due to the formation of quantum dots. © 2006 American Institute of Physics.Study of two-photon laser photolithography with SU-8 at cryogenic temperatures
Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference CLEO QELS 2006 (2006)
Abstract:
We show that the SU-8 epoxy resist can be exposed by two-photon absorption at 4 K, allowing spectroscopy and lithography to be performed by the same apparatus. We present a systematic study of the exposure parameters. © 2006 Optical Society of America.PL, magneto-PL and PLE of the trimetallic nitride template fullerene Er3N@C0
Physica Status Solidi B Basic Research 243:13 (2006) 3037-3041
Abstract:
ErThe effects of nitrogen and boron doping on the optical emission and diameters of single-walled carbon nanotubes
Carbon 44:13 (2006) 2752-2757
Abstract:
Using TEM, absorption and photoluminescence-excitation spectroscopy we have shown that nitrogen and nitrogen/boron doping of single-walled carbon nanotubes produce significant changes in both the optical properties and the diameter distribution of nanotubes produced by the arc-discharge method. Smaller diameter tubes are preferentially formed in the presence of boron. In addition the presence of nitrogen is found to significantly affect the emission properties of the nanotube ensemble, causing a shift in the dominant emission to lower energies, possibly due to changes in the bundling structure of the nanotubes in solution, but only very small changes are observed in the emission energies for individual nanotubes. © 2006 Elsevier Ltd. All rights reserved.PL, magneto-PL and PLE of the trimetallic nitride template fullerene Er3N@C-80
PHYS STATUS SOLIDI B 243:13 (2006) 3037-3041