Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49:3 (2006) 1092-1096
The effects of nitrogen and boron doping on the optical emission and diameters of single-walled carbon nanotubes
Carbon 44 (2006) 2752-2757
The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy
NANOTECHNOLOGY 17:3 (2006) 913-916
Time-resolved spectroscopy of non-thermal carrier dynamics in GaN
CURRENT APPLIED PHYSICS 6:5 (2006) 909-912
Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs
NANOTECHNOLOGY 17:23 (2006) 5754-5758