Professor Robert Taylor: Publications

Registration of single quantum dots using cryogenic laser photolithography

APPLIED PHYSICS LETTERS 88:19 (2006) ARTN 193106

Authors:

Kwan H Lee, Alex M Green, Robert A Taylor, David N Sharp, Jan Scrimgeour, Olivia M Roche, Jong H Na, Anas F Jarjour, Andrew J Turberfield, Frederic SF Brossard, David A Williams, G Andrew D Briggs

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Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy

JOURNAL OF THE KOREAN PHYSICAL SOCIETY 49:3 (2006) 1092-1096

Authors:

MK Bae, DH Shin, SN Yi, JH Na, AM Green, RA Taylor, SH Park, NL Kang

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The effects of nitrogen and boron doping on the optical emission and diameters of single-walled carbon nanotubes

Carbon 44 (2006) 2752-2757

Authors:

LJ Li, M Glerup, AN Khlobystov, JG Wiltshire, JL Sauvajo, RA Taylor, RJ Nicholas

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The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy

NANOTECHNOLOGY 17:3 (2006) 913-916

Authors:

YS Park, JH Na, RA Taylor, CM Park, KH Lee, TW Kang

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Time-resolved spectroscopy of non-thermal carrier dynamics in GaN

CURRENT APPLIED PHYSICS 6:5 (2006) 909-912

Authors:

K Kyhm, R Lota, RA Taylor, JF Ryan, NJ Cain

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Professor Robert Taylor

Research theme

Sub department

Lasing in perovskite nanocrystals

Registration of single quantum dots using cryogenic laser photolithography

Authors:

Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy

Authors:

The effects of nitrogen and boron doping on the optical emission and diameters of single-walled carbon nanotubes

Authors:

The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy

Authors:

Time-resolved spectroscopy of non-thermal carrier dynamics in GaN

Authors:

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Professor Robert Taylor

Research theme

Sub department

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Lasing in perovskite nanocrystals

Registration of single quantum dots using cryogenic laser photolithography

Authors:

Surface investigation of a cubic AIN buffer layer and GaN grown on Si (111) and si (100) as revealed by atomic force microscopy

Authors:

The effects of nitrogen and boron doping on the optical emission and diameters of single-walled carbon nanotubes

Authors:

The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy

Authors:

Time-resolved spectroscopy of non-thermal carrier dynamics in GaN

Authors: