Luminescence properties of isolated InGaN/GaN quantum dots
Physica Status Solidi (A) Applications and Materials Science 202:3 (2005) 372-376
Abstract:
In x Ga 1-xN quantum dots have been fabricated by the selective growth of GaN micro-pyramid arrays topped with InGaN/GaN quantum wells. The spatially- and spectrally-resolved luminescence properties of these structures were measured using low-temperature micro-photoluminescence spectroscopy, The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit linewidths down to 650 μeV (limited by the spectrometer resolution). We describe the broadening of the luminescence peak from a single dot as a function of temperature and excitation power. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Modeling the Nonlinear Photoluminescence Intensity Dependence Observed in Asymmetric GaN Quantum Discs with AlGaN Barriers
Institute of Electrical and Electronics Engineers (IEEE) (2005) 393-396
Biexciton and exciton dynamics in single InGaN quantum dots
NANOTECHNOLOGY 16:9 (2005) 1477-1481
Luminescence properties of isolated InGaN/GaN quantum dots
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 202:3 (2005) 372-376
Quantum Dot Emission from Selectively-Grown InGaN/GaN Micropyramid Arrays
AIP Conference Proceedings AIP 772 (2005) 865-866