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MicroPL optical setup

Professor Robert Taylor

Professor of Condensed Matter Physics

Research theme

  • Photovoltaics and nanoscience

Sub department

  • Condensed Matter Physics

Research groups

  • Quantum Optoelectronics
Robert.Taylor@physics.ox.ac.uk
Telephone: 01865 (2)72230
Clarendon Laboratory, room 246.1
orcid.org/0000-0003-2578-9645
  • About
  • Teaching
  • Positions available
  • Publications

Lasing in perovskite nanocrystals

Image of transverse modes from lasing nanocrystals
Nano Research, 14, 108, 2021

Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers

Applied Physics Letters 86:8 (2005) 1-3

Authors:

JH Na, RA Taylor, JH Rice, JW Robinson, KH Lee, YS Park, CM Park, TW Kang

Abstract:

We have investigated exciton dynamics in asymmetric GaN quantum discs embedded in AlGaN barriers with an Al content of 50% using time-integrated and time-resolved micro-photoluminescence measurements. Emission from the quantum discs emerges at lower energy than that from the GaN nanocolumns, which suggests that GaN quantum discs are strongly affected by the built-in electric field. The lifetimes of localized excitons in quantum discs were obtained. Nonlinear emission from quantum discs under high excitation power was attributed to tunneling of carriers to larger discs from smaller discs. © 2005 American Institute of Physics.
More details from the publisher

Luminescence properties of isolated InGaN/GaN quantum dots

Physica Status Solidi (A) Applications and Materials Science 202:3 (2005) 372-376

Authors:

RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, JD Smith, C Liu, IM Watson

Abstract:

In x Ga 1-xN quantum dots have been fabricated by the selective growth of GaN micro-pyramid arrays topped with InGaN/GaN quantum wells. The spatially- and spectrally-resolved luminescence properties of these structures were measured using low-temperature micro-photoluminescence spectroscopy, The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit linewidths down to 650 μeV (limited by the spectrometer resolution). We describe the broadening of the luminescence peak from a single dot as a function of temperature and excitation power. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
More details from the publisher

Modeling the Nonlinear Photoluminescence Intensity Dependence Observed in Asymmetric GaN Quantum Discs with AlGaN Barriers

Institute of Electrical and Electronics Engineers (IEEE) (2005) 393-396

Authors:

KH Lee, S Birner, JH Na, RA Taylor, JW Robinson¹, JH Rice¹, YS Park, CM Park, TW Kang
More details from the publisher

Biexciton and exciton dynamics in single InGaN quantum dots

NANOTECHNOLOGY 16:9 (2005) 1477-1481

Authors:

JH Rice, JW Robinson, JH Na, KH Lee, RA Taylor, DP Williams, EP O'Reilly, AD Andreev, Y Arakawa, S Yasin
More details from the publisher

Luminescence properties of isolated InGaN/GaN quantum dots

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 202:3 (2005) 372-376

Authors:

RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, JD Smith, C Liu, IM Watson
More details from the publisher

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