Biexciton and exciton dynamics in single InGaN quantum dots
NANOTECHNOLOGY 16:9 (2005) 1477-1481
Luminescence properties of isolated InGaN/GaN quantum dots
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 202:3 (2005) 372-376
Quantum Dot Emission from Selectively-Grown InGaN/GaN Micropyramid Arrays
AIP Conference Proceedings AIP 772 (2005) 865-866
Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
AIP CONF PROC 772 (2005) 865-866
Abstract:
InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially-, spectrally-, and time-resolved emission properties of these structures were measured using cathodoluminescence hyper-spectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit decay lifetimes of approximately 0.5 ns, with linewidths down to 650 mu eV (limited by the spectrometer resolution).Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field - art. no. 213103
APPLIED PHYSICS LETTERS 86:21 (2005) ARTN 213103