Professor Robert Taylor

Abstract:

InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially-, spectrally-, and time-resolved emission properties of these structures were measured using cathodoluminescence hyper-spectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit decay lifetimes of approximately 0.5 ns, with linewidths down to 650 μeV (limited by the spectrometer resolution). © 2005 American Institute of Physics.

Abstract:

Micro-photoluminescence measurements on single InGaN quantum dots at 4K exhibit a rich structure of lines to the high-energy side of the free exciton (X⁰), as a function of excitation density. Lines possibly attributable to biexcitons (2X⁰) and charged excitons (X⁺ and X^-) have been measured. We model the dots as truncated cone shapes, using a self-consistent finite difference method in the Hartree approximation to compute the ground-state wavefunctions of the four exciton complexes. We calculate the exciton recombination energy (X⁰) and the magnitude of the blue-shifts of the biexciton and charged excitons as a function of dot size and composition. The transition energy depends strongly on both dot composition and dot height, while the magnitude of the blue shift is determined primarily by the piezoelectric field-induced separation of electrons and holes. We use these two separate effects to place constraints on allowed models for the QDs. The experimentally measured energies are in agreement with these theoretical calculations. © 2005 American Institute of Physics.

Abstract:

The effect of an externally applied lateral electric field upon an exciton confined in a single InGaN quantum dot is studied using microphotoluminescence spectroscopy. The quantum-confined Stark effect causes a shift in the exciton energy of more than 5 meV, accompanied by a reduction in the exciton oscillator strength. The shift has both linear and quadratic terms as a function of the applied field. © 2005 American Institute of Physics.

Abstract:

We have investigated the behavior of excitons in GaN nanocolumns using time-integrated and time-resolved micro-photoluminescence measurements. In the weak confinement limit, the model of fractional-dimensional space gives an intermediate dimensionality of 2.14 for GaN nanocolumns, with an average diameter of 80 nm. Enhanced exciton and donor binding energies are deduced from a fractional-dimensional model and a phenomenological description. Time-integrated photoluminescence spectra as a function of temperature show a curved emission shift. Recombination dynamics are deduced from the temperature dependence of the PL efficiency and decay times. © 2005 American Institute of Physics.