Simulation of the quantum-confined stark effect in a single InGaN quantum dot
(2004) 5-6
Abstract:
By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the quantum-confined Stark effect has both permanent dipole moment and polarizability components.Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
(2004) 568-572
Abstract:
We present studies of the optical transitions in InGaN quantum dots (QDs). Spatially-resolved micro-photoluminescence (mu-PL) of single InGaN QDs reveals very sharp, clearly-defined peaks that are characteristic of strongly-confined carriers. Time-resolved measurements for single InGaN QDs reveal single exponential decays in contrast to non-exponential decays from the 2D wetting layer (WL) and from ensemble measurements. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Time-resolved gain saturation dynamics in InGaN multi-quantum well structures
PHYS STATUS SOLIDI C (2004) 2508-2511
Time-resolved dynamics in single InGaN quantum dots
Applied Physics Letters 83:13 (2003) 2674-2676
Abstract:
A study was performed on the time-resolved dynamics in single InGaN quantum dots. The recombination was shown to be characterized by a single exponential decay. The results showed that the lifetimes of single dots in the temperature range 4 to 60 K decrease with increasing temperature.Time-resolved Dynamics in Single InGaN Quantum Dots
Applied Physics Letters 83 (2003) 2674-2676