Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots
IEEE TRANSACTIONS ON NANOTECHNOLOGY 3:3 (2004) 343-347
Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
APPLIED PHYSICS LETTERS 85:19 (2004) 4281-4283
Simulation of the quantum-confined stark effect in a single InGaN quantum dot
(2004) 5-6
Abstract:
By means of a 3D self-consistent numerical simulation we have calculated the effect of an externally-applied lateral electric field upon a single InGaN quantum dot. Overall, good agreement between the modeling and experimental results was observed. Modeling results support the observation that the quantum-confined Stark effect has both permanent dipole moment and polarizability components.Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
(2004) 568-572
Abstract:
We present studies of the optical transitions in InGaN quantum dots (QDs). Spatially-resolved micro-photoluminescence (mu-PL) of single InGaN QDs reveals very sharp, clearly-defined peaks that are characteristic of strongly-confined carriers. Time-resolved measurements for single InGaN QDs reveal single exponential decays in contrast to non-exponential decays from the 2D wetting layer (WL) and from ensemble measurements. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Time-resolved gain saturation dynamics in InGaN multi-quantum well structures
PHYS STATUS SOLIDI C (2004) 2508-2511