TIME-RESOLVED AND CW OPTICAL STUDIES OF MBE-GROWN ZNTE/GASB EPILAYERS
J LUMIN 60-1 (1994) 788-791
TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF STIMULATED-EMISSION AND EXCITON DYNAMICS IN ZNSE/ZNS0.18SE0.82 SUPERLATTICES
SOLID STATE ELECTRON 37:4-6 (1994) 1133-1136
Excitonic processes and lasing in znsse/znse superlattices
Superlattices and Microstructures 16:4 (1994) 371-377
Abstract:
We report the results of a systematic investigation of the stimulated emission in ZnSSe/ZnSe superlattices, by time resolved luminescence and high excitation intensity magnetoluminescence. The stimulated emission is found to have excitation origin from localized states around the threshold, and free-carrier origin at carrier densities well above the phase space filling threshold of the exciton. © 1994 Academic Press Limited.Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/Alx Ga1-x As quantum wells
Journal of Luminescence 59:5 (1994) 303-313
Abstract:
We have measured the energy relaxation of hot carriers in doped and undoped GaAs/AlxGa1-xAs quantum wells by detecting time-resolved hot luminescence using a two-pulse intensity correlation technique. The results are compared with time-dependent intensity correlation functions calculated using a model of energy relaxation by optical phonon interactions which includes non-equilibrium phonon effects. The excellent agreement between calculated and experimental correlation functions shows the great potential of this method in measuring ultrafast relaxation processes. © 1994.Time-resolved and CW optical studies of MBE-grown ZnTe/GaSb epilayers
Journal of Luminescence 60-61:C (1994) 786-787