Femtosecond Time-Resolved Optical Studies of Photoexcited States in C60
Chapter in Electronic Properties of Fullerenes, Springer Nature 117 (1993) 292-296
TIME-RESOLVED OPTICAL STUDIES OF PHOTO-EXCITED STATES IN C-60
INT J MOD PHYS B 6:23-24 (1992) 3931-3934
FEMTOSECOND HOLE BURNING MEASUREMENTS IN SEMICONDUCTORS
J LUMIN 53:1-6 (1992) 321-326
Femtosecond hole burning measurements in semiconductors
Journal of Luminescence 53:1-6 (1992) 321-326
Abstract:
Femtosecond transient transmission spectroscopy has been used to study the generation and thermalisation of hot photoexcited electrons and holes in semiconductors. Work on bulk AlxGa1-xAs has been extended to include a detailed numerical model of carrier thermalisation and cooling, which allows for dynamic screening of carrier-phonon interactions. This model shows excellent agreement with experimentally observed effects such as hole burning, single LO-phonon emission by electrons and two-temperature behaviour of electrons and holes at early times (<10 ps). Hole burning measurements have also been made on type-I GaAs/AlAs superlattices, where the density dependence of the transient transmission spectra has been investigated. © 1992.ANISOTROPIC OPTICAL STARK-EFFECT IN GASE
20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3 (1990) 1891-1894