THE FEMTOSECOND OPTICAL KERR EFFECT IN MOLTEN CESIUM-CHLORIDE
JOURNAL OF PHYSICS-CONDENSED MATTER 1:16 (1989) 2715-2719
ENERGY RELAXATION IN p- AND n-GaAs QUANTUM WELLS: CONFINEMENT EFFECTS
Chapter in Hot Carriers in Semiconductors, Elsevier (1988) 459-462
ENERGY RELAXATION IN PARA-GAAS AND NORMAL-GAAS QUANTUM WELLS - CONFINEMENT EFFECTS
SOLID-STATE ELECTRONICS 31:3-4 (1988) 459-462
Time-resolved exciton photoluminescence in gase and gate
Journal of Physics C: Solid State Physics 20:36 (1987) 6175-6187
Abstract:
Time-resolved photoluminescence measurements of the layered semiconductors GaSe and GaTe have been made using a mode-locked dye laser a synchronously scanning streak camera. It is shown that at low excitation densities (1015-1017cm-3) exciton dynamics is dominated by trapping at defects. A rate equation model is developed that describes exciton formation, recombination and trapping. At 4K the authors determine free-exciton recombination times at 200 ps for GaTe and 350 ps for GaSe. Trapping times of 200 and 900 ps yield capture cross sections of 1.2*10-14cm2and 3.6*10-15cm2for GaTe and GaSe respectively. © 1987 IOP Publishing Ltd.TIME-RESOLVED EXCITON PHOTOLUMINESCENCE IN GASE AND GATE
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS 20:36 (1987) 6175-6187