Investigation of the dynamic range of superconducting nano-bridge switches
Proceedings of the International Symposium on Space Terahertz Technology IEEE (2015)
Abstract:
We present the design of planar superconducting on/off switch comprising a number of high normal resistance nano-bridges deposited across a the slot of a unilateral finline. We have simulated the performance of this device and have shown that it has a much larger dynamic range than a single nano-bridge fabricated from the same material (Niobium Nitride, NbN). The response of a single bridge device was measured either directly using a terahertz power meter or by using superconductor-insulator-superconductor (SIS) device as direct detector. In either method, we have demonstrated good agreement between simulations and measurements, and therefore confirmed the integrity of our analysis of the device performance. We have recently designed and fabricated multiple nano-bridges superconducting switches using 50 µm thick NbN film. The measurement of these devices is currently in progress and we expect to report the results in the forthcoming ISSTT conference in March.A single-chip dual-band switched SIS mixer
Proceedings of SPIE SPIE, the international society for optics and photonics 9153 (2014) 91532o-91532o-10
Ultra-Wide Intermediate Bandwidth for High-Frequency SIS Mixers
IEEE Transactions on Terahertz Science and Technology Institute of Electrical and Electronics Engineers (IEEE) 4:2 (2014) 165-170
Development of a NbN Deposition Process for Superconducting Quantum Sensors
(2014)
A superconducting millimetre switch with multiple nano-bridges
ISSTT 2014 - 25th International Sympsoium on Space Terahertz Technology, Proceedings (2014) 164-169