Dr. Boon Kok Tan

Abstract:

We describe the design and fabrication of a 220 GHz superconductor-insulator-superconductor (SIS) mixer with ultrawide IF bandwidth. The mixer is fabricated on a 100 µm thick quartz substrate, with planar circuit on-chip integration. The RF power is coupled to the tunnel junction via a unilateral finline taper and a slotline-to-microstrip transition. We used a double-stub tuning network to tune out the junction’s parasitic capacitance at a broad RF bandwidth, and matched the output impedance of the mixer to the input impedance of the IF amplifier (50 Ω) from 4–18 GHz using a 6-stage IF impedance-transformer. We have fabricated these devices and have measured good DC current-voltage (IV) characteristic curves. The heterodyne mixing performance of these devices is currently being measured, and we expect to present the results in the forthcoming ISSTT conference in March.

Abstract:

Efficiently mapping large areas of the sky with high spectral resolution at mm and sub-mm wavelengths will require a new generation of heterodyne focal-plane array receivers. The number of pixels in such arrays has not increased particularly rapidly in the last two decades, with maximum achieved pixel numbers between 16 and 64 (e.g. [1] and [2]). Thus new approaches are needed to address such problems as local oscillator (LO) injection, feed horn fabrication and SIS mixer design, fabrication and repeatability.

Here we describe a prototype focal-plane array unit based on unilateral finline SIS mixers, fed with smooth-walled feed horns. LO injection power diplexing is achieved by a combination of directly machined waveguide Y-power splitters and bow-tie cross waveguide couplers. The 1×4 prototype array, currently under construction, will demonstrate several technologies relevant to the construction of large format arrays.

Abstract:

We present preliminary measured responses of a planar superconducting on/off switch centred at the 220 GHz. The superconducting switch, comprising three niobium nitride (NbN) bridges, deposited across the slotline section of a backto-back unilateral finline, made of a similar superconducting material. The transmission characteristics of the superconducting switch illuminated by a sub-millimetre source were measured using a superconductor-insulator-superconductor (SIS) chip as direct detector. The NbN bridges were switched from the superconducting state to the normal state by a bias current exceeding the critical current of the bridges. With this arrangement, we have measured a switching dynamic range of ∼ 13 dB at 245 GHz, demonstrating the successful operation of the multiple NbN bridges planar superconducting on/off switch.

Abstract:

The presence of spurious frequency tones emanating from a harmonically generated local oscillator (LO) signal can significantly degrade the performance of a SuperconductorInsulator-Superconductor (SIS) tunnel junction mixer [1]. The existence of harmonics is often revealed by distorted I-V curves obtained when pumping the SIS device with the LO. We have investigated this effect by using a commercially available source and correlating the photon step induced I-V curve structure with a direct frequency measurement made via a Fourier Transform Spectrometer (FTS) and a spectrum analyser. Our results suggest that intermixing frequency products are generated within the first, low frequency, stage of the LO chain, and these unwanted signals are converted to high frequency tones through subsequent stages of LO amplification and frequency up-conversion. The experimental work has been performed by using measurement facilities available at the University of Oxford and the Rutherford Appleton Laboratory (RAL), UK.

Abstract:

We present the design of planar superconducting on/off switch comprising a number of high normal resistance nano-bridges deposited across a the slot of a unilateral finline. We have simulated the performance of this device and have shown that it has a much larger dynamic range than a single nano-bridge fabricated from the same material (Niobium Nitride, NbN). The response of a single bridge device was measured either directly using a terahertz power meter or by using superconductor-insulator-superconductor (SIS) device as direct detector. In either method, we have demonstrated good agreement between simulations and measurements, and therefore confirmed the integrity of our analysis of the device performance. We have recently designed and fabricated multiple nano-bridges superconducting switches using 50 µm thick NbN film. The measurement of these devices is currently in progress and we expect to report the results in the forthcoming ISSTT conference in March.