Bernard Wenger

Abstract:

The efficiency of colloidal quantum dot (QD) color‐conversion films is fundamentally limited by the critical trade‐off between light extraction and parasitic self‐absorption. Although incorporating scattering particles is a standard strategy to disrupt total internal reflection (TIR) modes, empirical optimization is often constrained by the complex interplay between scattering anisotropy and optical path length extension. This paper presents a rigorous wavelength‐dependent 2D cross‐sectional Monte Carlo simulation to decouple these competing mechanisms in perovskite QD‐PMMA polymer composites embedded with TiO scatterers. By integrating Mie theory with stochastic propagation modeling, we systematically analyze the impact of TiO particle radius () and volume fraction on external quantum efficiency. Our model demonstrates the existence of an optimal scattering regime (typically at a volume fraction of 20–25%) where the out‐coupling probability is maximized before reabsorption losses dominate. Furthermore, our findings reveal that surface topology plays a decisive role; the transition from a specular to a Lambertian interface alters the optimal scattering parameters by disrupting the TIR condition more effectively than volumetric scattering alone. These findings provide a quantitative design blueprint for maximizing the luminous efficiency of next‐generation wide‐color gamut displays and micro‐LED arrays.

Abstract:

We explore silane-coated formamidinium lead bromide (FAPbBr₃) quantum dots (QDs) as single photon emitters and compare them to FAPbBr₃ QDs passivated with a phosphoethylammonium derivative (PEAC₈C₁₂), which represents current state-of-the-art ligand passivation. We compare properties including single-photon purity (g⁽²⁾(τ)), line width, blinking, and photostability. We find that at room temperature, these silane-coated dots perform comparably to PEAC₈C₁₂-passivated dots, while exhibiting improvements in photostability. However, we find that at 4 K, silane-coated FAPbBr₃ QDs perform worse than the PEAC₈C₁₂-passivated samples, exhibiting faster blue-shifting and photobleaching under illumination. Analysis of fluorescence lifetime intensity distributions from the photon-counting data indicates increased efficiency of fast nonradiative processes in the silane-coated QDs at 4 K. We propose a trion-related degradation pathway at low temperatures that is consistent with the observed kinetics and estimate that at 4 K with 6.1 μJ/cm², 472 nm excitation the silane-coated QDs build up double the trion population of their PEAC₈C₁₂-passivated counterparts.

Abstract:

Charge carrier mobility is a fundamental property of semiconductor materials that governs many electronic device characteristics. For metal halide perovskites, a wide range of charge carrier mobilities have been reported using different techniques. Mobilities are often estimated via transient methods assuming an initial charge carrier population after pulsed photoexcitation and measurement of photoconductivity via non-contact or contact techniques. For nanosecond to millisecond transient methods, early-time recombination and exciton-to-free-carrier ratio hinder accurate determination of free-carrier population after photoexcitation. By considering both effects, we estimate long-range charge carrier mobilities over a wide range of photoexcitation densities via transient photoconductivity measurements. We determine long-range mobilities for FA0.83Cs0.17Pb(I0.9Br0.1)3, (FA0.83MA0.17)0.95Cs0.05Pb(I0.9Br0.1)3 and CH3NH3PbI3-xClx polycrystalline films in the range of 0.3 to 6.7 cm2 V−1 s−1. We demonstrate how our data-processing technique can also reveal more precise mobility estimates from non-contact time-resolved microwave conductivity measurements. Importantly, our results indicate that the processing of polycrystalline films significantly affects their long-range mobility.

Abstract:

Despite the incredible progress made, the highest efficiency perovskite solar cells are still restricted to small areas (<1 cm2). In large part, this stems from a poor understanding of the widespread spatial heterogeneity in devices. Conventional techniques to assess heterogeneities can be time consuming, operate only at microscopic length scales, and demand specialized equipment. We overcome these limitations by using luminescence imaging to reveal large, millimeter-scale heterogeneities in the inferred electronic properties. We determine spatially resolved maps of “charge collection quality”, measured using the ratio of photoluminescence intensity at open and short circuit. We apply these methods to quantify the inhomogeneities introduced by a wide range of transport layers, thereby ranking them by suitability for upscaling. We reveal that top-contacting transport layers are the dominant source of heterogeneity in the multilayer material stack. We suggest that this methodology can be used to accelerate the development of highly efficient, large-area modules, especially through high-throughput experimentation.

Abstract:

Having captivated the research community with simple fabrication processes and staggering device efficiencies, perovskite-based optoelectronics are already on the way to commercialization. However, one potential obstacle to this commercialization is the almost exclusive use of toxic, highly coordinating, high boiling point solvents to make perovskite precursor inks. Herein, we demonstrate that nonpolar organic solvents, such as toluene, can be combined with butylamine to form an effective solvent for alkylammonium-based perovskites. Beyond providing broader solvent choice, our finding opens the possibility of blending perovskite inks with a wide range of previously incompatible materials, such as organic molecules, polymers, nanocrystals, and structure-directing agents. As a demonstration, using this solvent, we blend the perovskite ink with 6,6-phenyl-C-61-butyric acid methyl ester and show improved perovskite crystallization and device efficiencies. This processing route may enable a myriad of new possibilities for tuning the active layers in efficient photovoltaics, light-emitting diodes, and other semiconductor devices.