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CMP
Credit: Jack Hobhouse

Bernard Wenger

Long Term Visitor

Sub department

  • Condensed Matter Physics
bernard.wenger@physics.ox.ac.uk
Telephone: 01865 (2) 72401
Robert Hooke Building, room G20
  • About
  • Publications

Oxidative passivation of metal halide perovskites

Joule Cell Press 3:11 (2019) 2716-2731

Authors:

Julian Godding, Alexandra Ramadan, Yen-Hung Lin, Kelly Schutt, Henry J Snaith, Bernard Wenger

Abstract:

Metal halide perovskites have demonstrated extraordinary potential as materials for next-generation optoelectronics including photovoltaics and light-emitting diodes. Nevertheless, our understanding of this material is still far from complete. One remaining puzzle is the phenomenon of perovskite “photo-brightening”: the increase in photoluminescence during exposure to light in an ambient atmosphere. Here, we propose a comprehensive mechanism for the reactivity of the archetypal perovskite, MAPbI3, in ambient conditions. We establish the formation of lead-oxygen bonds by hydrogen peroxide as the key factor leading to perovskite photo-brightening. We demonstrate that hydrogen peroxide can be applied directly as an effective “post-treatment” to emulate the process and substantially improve photoluminescence quantum efficiencies. Finally, we show that the treatment can be incorporated into photovoltaic devices to give a 50 mV increase in open-circuit voltage, delivering high 19.2% steady-state power conversion efficiencies for inverted perovskite solar cells of the mixed halide, mixed cation perovskite FA0.83Cs0.17Pb(I0.9Br0.1)3.
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Microsecond Carrier Lifetimes, Controlled p‑Doping, and Enhanced Air Stability in Low-Bandgap Metal Halide Perovskites

ACS Energy Letters American Chemical Society (ACS) 4:9 (2019) 2301-2307

Authors:

Alan R Bowman, Matthew T Klug, Tiarnan AS Doherty, Michael D Farrar, Satyaprasad P Senanayak, Bernard Wenger, Giorgio Divitini, Edward P Booker, Zahra Andaji-Garmaroudi, Stuart Macpherson, Edoardo Ruggeri, Henning Sirringhaus, Henry J Snaith, Samuel D Stranks
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Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics

Energy and Environmental Science Royal Society of Chemistry (2019)

Authors:

Nakita Noel, Habisreutinger, A Pellaroque, F Pulvirenti, Bernard Wenger, F Zhang, Yen-Hung Lin, OG Reid, J Leisen, Y Zhang, S Barlow, Marder, A Kahn, HJ Snaith, CB Arnold, BP Rand

Abstract:

We demonstrate a method for controlled p-doping of the halide perovskite surface using molecular dopants, resulting in reduced non-radiative recombination losses and improved device performance.

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Overcoming zinc oxide interface instability with a methylammonium-free perovskite for high performance solar cells

Advanced Functional Materials Wiley 29:47 (2019) 1900466

Authors:

Kelly Schutt, P Nayak, A Ramadan, B Wenger, Y-H Lin, H Snaith

Abstract:

Perovskite solar cells have achieved the highest power conversion efficiencies on metal oxide n‐type layers, including SnO2 and TiO2. Despite ZnO having superior optoelectronic properties to these metal oxides, such as improved transmittance, higher conductivity, and closer conduction band alignment to methylammonium (MA)PbI3, ZnO is largely overlooked due to a chemical instability when in contact with metal halide perovskites, which leads to rapid decomposition of the perovskite. While surface passivation techniques have somewhat mitigated this instability, investigations as to whether all metal halide perovskites exhibit this instability with ZnO are yet to be undertaken. Experimental methods to elucidate the degradation mechanisms at ZnO–MAPbI3 interfaces are developed. By substituting MA with formamidinium (FA) and cesium (Cs), the stability of the perovskite–ZnO interface is greatly enhanced and it is found that stability compares favorably with SnO2‐based devices after high‐intensity UV irradiation and 85 °C thermal stressing. For devices comprising FA‐ and Cs‐based metal halide perovskite absorber layers on ZnO, a 21.1% scanned power conversion efficiency and 18% steady‐state power output are achieved. This work demonstrates that ZnO appears to be as feasible an n‐type charge extraction layer as SnO2, with many foreseeable advantages, provided that MA cations are avoided.
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Facile Synthesis of Stable and Highly Luminescent Methylammonium Lead Halide Nanocrystals for Efficient Light Emitting Devices.

Journal of the American Chemical Society (2019)

Authors:

Yasser Hassan, Olivia J Ashton, Jong Hyun Park, Guangru Li, Nobuya Sakai, Bernard Wenger, Amir-Abbas Haghighirad, Nakita K Noel, Myoung Hoon Song, Bo Ram Lee, Richard H Friend, Henry J Snaith

Abstract:

Metal halide perovskites are promising candidates for use in light emitting diodes (LEDs), due to their potential for colour tuneable and high luminescence efficiency. While recent advances in perovskite-based light emitting diodes have resulted in external quantum efficiencies exceeding 12.4 % for the green emitters, and infrared emitters based on 3D/2D mixed dimensional perovskites have exceeded 20%, the external quantum efficiencies of the red and blue emitters still lag behind. A critical issue to date is creating highly emissive and stable perovskite emitters with the desirable emission band gap to achieve full-colour displays and white LEDs. Herein, we report the preparation and characterization of a highly luminescent and stable suspension of cubic-shaped methylammonium lead triiodide CH3NH3PbI3 perovskite nanocrystals, where we synthesise the nanocrystals via a ligand-assisted re-precipitation technique, using an acetonitrile/methylamine compound solvent system to solvate the ions, and toluene as the anti-solvent to induce crystallisation. Through tuning the ratio of the ligands, the ligand to toluene ratio, and the temperature of the toluene, we obtain a solution of CH3NH3PbI3 nanocrystals with a photoluminescence quantum yield exceeding 93%, and tuneable emission between 660 nm and 705 nm. We also achieved red emission at 635 nm by blending the nanocrystals with bromide salt and obtained perovskite-based light emitting diodes with maximum electroluminescent external quantum efficiency of 2.75%.
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