Bernard Wenger

Abstract:

Successful chemical doping of metal halide perovskites with small amounts of heterovalent metals has attracted recent research attention because of its potential to improve long-term material stability and tune absorption spectra. However, some additives have been observed to impact negatively on optoelectronic properties, highlighting the importance of understanding charge-carrier behavior in doped metal halide perovskites. Here, we present an investigation of charge-carrier trapping and conduction in films of MAPbBr3 perovskite chemically doped with bismuth. We find that the addition of bismuth has no effect on either the band gap or exciton binding energy of the MAPbBr3 host. However, we observe a substantial enhancement of electron-trapping defects upon bismuth doping, which results in an ultrafast charge-carrier decay component, enhanced infrared emission, and a notable decrease of charge-carrier mobility. We propose that such defects arise from the current approach to Bi-doping through addition of BiBr3, which may enhance the presence of bromide interstitials.

Abstract:

The relationship between the chemical composition of lead halide perovskite materials and their crystal and electronic structure is not yet sufficiently understood, despite its fundamental importance. Here, we determine the crystal and electronic structure of cesium lead bromide (CsPbBr₃) while deliberately varying the cesium content. At substoichiometric concentrations of cesium, there are large variations in the frontier electronic structure of CsPbBr₃ with only small variations in Cs content. We observe a critical point after which large variations in the chemical composition of CsPbBr₃ result in comparably small changes in valence and conduction band energies. This behavior is starkly different from that of traditional semiconductors, such as InGaAs and GaInP, and demonstrates an impressive energetic tolerance of CsPbBr₃ to large changes in its stoichiometry. This observation helps us to understand why a broad range of relatively uncontrolled, simple processing methodologies can deliver highly functional metal halide perovskite thin films.

Abstract:

Metal halide perovskites have demonstrated extraordinary potential as materials for next-generation optoelectronics including photovoltaics and light-emitting diodes. Nevertheless, our understanding of this material is still far from complete. One remaining puzzle is the phenomenon of perovskite “photo-brightening”: the increase in photoluminescence during exposure to light in an ambient atmosphere. Here, we propose a comprehensive mechanism for the reactivity of the archetypal perovskite, MAPbI3, in ambient conditions. We establish the formation of lead-oxygen bonds by hydrogen peroxide as the key factor leading to perovskite photo-brightening. We demonstrate that hydrogen peroxide can be applied directly as an effective “post-treatment” to emulate the process and substantially improve photoluminescence quantum efficiencies. Finally, we show that the treatment can be incorporated into photovoltaic devices to give a 50 mV increase in open-circuit voltage, delivering high 19.2% steady-state power conversion efficiencies for inverted perovskite solar cells of the mixed halide, mixed cation perovskite FA0.83Cs0.17Pb(I0.9Br0.1)3.