Type inversion in irradiated silicon: a half truth
ArXiv physics/0409049 (2004)
Abstract:
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.Bounding the MSSM sector from above with the Tevatrons Bs->mu mu.
Physics Letters B 600 (2004) 261-269
High-Q2 neutral current cross sections in e+p deep inelastic scattering at sqrt(s)=318 GeV
Physical Review D 70 (2004) 052001,22pp
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Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Elsevier 530:1-2 (2004) 71-76
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 530 (2004) 293-310