Oxide electronics

Abstract:

The D2O ice VI to ice XV hydrogen ordering phase transition at ambient pressure is investigated in detail with neutron diffraction. The lattice constants are found to be sensitive indicators for hydrogen ordering. The a and b lattice constants contract whereas a pronounced expansion in c is found upon hydrogen ordering. Overall, the hydrogen ordering transition goes along with a small increase in volume which explains why the phase transition is more difficult to observe upon cooling under pressure. Slow-cooling ice VI at 1.4 GPa gives essentially fully hydrogen-disordered ice VI. Consistent with earlier studies, the ice XV obtained after slow-cooling at ambient pressure is best described with P-1 space group symmetry. Using a new computational approach, we achieve the atomistic reconstruction of a supercell structure that is consistent with the average partially ordered structure derived from Rietveld refinements. This shows that C-type networks are most prevalent in ice XV but other structural motifs outside of the classifications of the fully hydrogen-ordered networks are identified as well. The recently proposed Pmmn structural model for ice XV is found to be incompatible with our diffraction data and we argue that only structural models that are capable of describing full hydrogen order should be used.

Abstract:

The physical properties of epitaxial films can fundamentally differ from those of bulk single crystals even above the critical thickness. By a combination of non-resonant x-ray magnetic scattering, neutron diffraction and vector-mapped x-ray magnetic linear dichroism photoemission electron microscopy, we show that epitaxial (111)-BiFeO3 films support sub-micron antiferromagnetic domains, which are magneto-elastically coupled to a coherent crystallographic monoclinic twin structure. This unique texture, which is absent in bulk single crystals, should enable control of magnetism in BiFeO3 film devices via epitaxial strain.

Abstract:

The magnetic ground state of Sr3ARuO6, with A=(Li,Na), is studied using neutron diffraction, resonant x-ray scattering, and laboratory characterization measurements of high-quality crystals. Combining these results allows us to observe the onset of long-range magnetic order and distinguish the symmetrically allowed magnetic models, identifying in-plane antiferromagnetic moments and a small ferromagnetic component along the c axis. While the existence of magnetic domains masks the particular in-plane direction of the moments, it has been possible to elucidate the ground state using symmetry considerations. We find that due to the lack of local anisotropy, antisymmetric exchange interactions control the magnetic order, first through structural distortions that couple to in-plane antiferromagnetic moments and second through a high-order magnetoelastic coupling that lifts the degeneracy of the in-plane moments. The symmetry considerations used to rationalize the magnetic ground state are very general and will apply to many systems in this family, such as Ca3ARuO6, with A=(Li,Na), and Ca3LiOsO6 whose magnetic ground states are still not completely understood.

Abstract:

We investigate polarization memory effects in single-crystal CuFeO2, which has a magnetically induced ferroelectric phase at low temperatures and applied B fields between 7.5 and 13 T. Following electrical poling of the ferroelectric phase, we find that the nonpolar collinear antiferromagnetic ground state at B=0 T retains a strong memory of the polarization magnitude and direction, such that upon reentering the ferroelectric phase a net polarization of comparable magnitude to the initial polarization is recovered in the absence of external bias. This memory effect is very robust: in pulsed-magnetic-field measurements, several pulses into the ferroelectric phase with reverse bias are required to switch the polarization direction, with significant switching only seen after the system is driven out of the ferroelectric phase and ground state either magnetically (by application of B>13 T) or thermally. The memory effect is also largely insensitive to the magnetoelastic domain composition, since no change in the memory effect is observed for a sample driven into a single-domain state by application of stress in the [110] direction. On the basis of Monte Carlo simulations of the ground-state spin configurations, we propose that the memory effect is due to the existence of helical domain walls within the nonpolar collinear antiferromagnetic ground state, which would retain the helicity of the polar phase for certain magnetothermal histories.