Quantum Optoelectronics

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Hot Electron Relaxation and Trapping in Modulation — Doped GaAs/GaAlAs Multiple Quantum Well Heterostructures

Springer Nature (1985) 567-570

Authors:

JF Ryan, RA Taylor, AJ Turberfield, Angela Maciel, JM Worlock, AC Gossard, W Wiegmann
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PICOSECOND PHOTOLUMINESCENCE MEASUREMENTS OF LANDAU-LEVEL LIFETIMES AND TIME-DEPENDENT LANDAU-LEVEL LINBROADENING IN MODULATION-DOPED GAAS-GAALAS MULTIPLE QUANTUM WELLS

PHYSICA B & C 134:1-3 (1985) 318-322

Authors:

JF RYAN, RA TAYLOR, AJ TURBERFIELD, JM WORLOCK
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PICOSECOND STUDIES OF LUMINESCENCE IN POLYTHIOPHENE AND POLYDIACETYLENE

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS 18:26 (1985) L843-L847

Authors:

KS WONG, W HAYES, T HATTORI, RA TAYLOR, JF RYAN, K KANETO, Y YOSHINO, D BLOOR
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Stimulated Recombination and the Dynamic Mott Transition in GaTe

Springer Nature (1985) 1371-1374

Authors:

CN Ironside, RA Taylor, JF Ryan
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MEASUREMENTS OF HOT CARRIER RELAXATION AND RECOMBINATION IN GaAs QUANTUM WELLS BY PICOSECOND OPTICAL PROBING.

IEE Colloquium (Digest) (1984)

Authors:

JF Ryan, RA Taylor, AJ Turberfield

Abstract:

In this paper the authors show how picosecond time-resolved photoluminescence can be used to probe the energy relaxation of hot carriers in semiconductor structures. In addition, by measuring the variation of luminescence lifetime with carrier density one can obtain information about radiative and nonradiative decay processes. These processes are important in all photonic devices, but especially so in structures where interfaces may have a particularly strong influence.