Quantum Optoelectronics

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Nitride-based quantum dots for single photon source applications

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 206:11 (2009) 2510-2523

Authors:

Anas F Jarjour, Rachel A Oliver, Robert A Taylor
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Non-linear excitation and correlation studies of single InGaN quantum dots

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4 6:4 (2009) 864-+

Authors:

Daniel P Collins, Anas F Jarjour, Robert A Taylor, Maria Hadjipanayi, Rachel A Oliver, Menno J Kappers, Colin J Humphreys, Abbes Tahraoui
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Optical properties of Er3+ in fullerenes and in β-PbF2 single-crystals

OPTICAL MATERIALS 32:1 (2009) 251-256

Authors:

Geraldine Dantelle, Archana Tiwari, Rizvi Rahman, Simon R Plant, Kyriakos Porfyrakis, Michel Mortier, Robert A Taylor, G Andrew D Briggs
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Quantum confined Stark effect and corresponding lifetime reduction in a single InxGa1-xN quantum disk

APPLIED PHYSICS LETTERS 95:18 (2009) ARTN 181910

Authors:

Mark J Holmes, Young S Park, Jamie H Warner, Robert A Taylor
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Electrically driven single InGaN/GaN quantum dot emission

Applied Physics Letters 93:23 (2008)

Authors:

AF Jarjour, RA Taylor, RA Oliver, MJ Kappers, CJ Humphreys, A Tahraoui

Abstract:

Electroluminescence from single nitride-based quantum dots is reported. Clear single quantum dot emission is observed, which persists up to ∼85 K. This is achieved through the study of a quantum dot layer in the intrinsic region of a forward-biased vertical p-i-n diode. The current-voltage characteristic of the devices is examined at 4.3 K and observed to exhibit electrical bistability phenomena, which is explained in terms of charge accumulation in the InGaN layer. The dependence of the emission properties on current injection conditions are presented and related to the electrical properties of the device. © 2008 American Institute of Physics.
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